相关论文: A 5 GHz LNA for a Radio-Astronomy Experiment

To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the…

This paper presents a low-noise amplifier (LNA) that was developed for a new radio telescope comprised of 512 parabolic dish antennas. The LNA closely interfaces to a custom-made antenna feed with an impedance co-designed to provide noise…

This paper presents the analysis, design, fabrication, and measurement of an integrated low-noise amplifier (LNA) implemented using a 130 nm CMOS technology, operating in the 2.4 GHz band. The LNA is a crucial component in the performance…

In this paper a new design of MMIC based LNA is outlined. This design uses a discrete 100-nm InP HEMT placed in front of an existing InP MMIC LNA to lower the overall noise temperature of the LNA. This new approach known as the Transistor…

A Low-Power Variable Gain (VG) mm-Wave Low Noise Amplifier (LNA) is designed and simulated in a 28-nm CMOS process. The LNA utilizes a simple, yet novel, technique presented in this paper to vary the small-signal output resistance to…

We give a description of the design, construction and testing of the 30 and 44 GHz Front End Modules (FEMs) for the Low Frequency Instrument (LFI) of the Planck mission to be launched in 2009. The scientific requirements of the mission…

This study undertakes the theoretical design, CAD modeling, realization, and performance analysis of a microwave low-noise amplifier (LNA) which has been accurately developed for operation at 3.0 GHz (S-band). The objective of this research…

Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this…

This paper introduces a robust Pareto design approach for transistor sizing of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), particularly for power amplifier (PA) and low-noise amplifier (LNA) designs in 5G applications.…

A low-noise amplifier (LNA) amplifies a very low-power signal without significantly degrading its signal-to-noise ratio. This paper provides the design of a linear low noise amplifier with the transistor BFP 640 using bilateral approach…

The SPLENDOR Collaboration studies novel narrow-gap semiconductors and engineered a substrate agnostic detector platform to achieve $\mathcal{O}$(meV) energy sensitivity designed for low mass dark matter searches. This was achieved using…

This article introduces a design of a Low Noise Amplifier (LNA), for the field of diamond particle detectors. This amplifier is described from simulation to measurements, which include pulses from {\alpha} particles detection. In hadron…

This paper presents an ultra-low noise L-band radio astronomical cryogenic receiver for FAST telescope. The development of key low noise microwave parts of Coupling-LNA and conical quad-ridge OMT and reasonable system integration achieve…

The growing number of phased array feeds (PAF) being built for radio astronomy demonstrates an increasing need for low noise amplifiers (LNA) that are designed for repeatability, low noise, and ease of manufacture. Specific design features…

Next-generation cellular systems require low-power mm-wave phased-array ICs. Variable-gain LNAs (VG-LNAs) are key blocks enabling reduced hardware complexity, performance improvement and added functionalities. This paper reports a low-power…

Noise level frequently set the basic limit on the smallest signal. New noise reduction technology and amplifiers voltage-noise density, yet still offer high speed, high accuracy, and low power solution. Low noise amplifiers always play a…

The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We observed that an InP HEMT 0.3-14GHz LNA at 2K,…

This paper demonstrates designing and developing of an Ultra-Low Noise Amplifier which should potentially increase the sensitivity of the existing Magnetic Resonance Imaging (MRI) systems. The Design of the LNA is fabricated and…

Next-generation (5G/6G) wireless systems demand low-power mm-wave phased-array ICs. Variable-gain LNAs (VGLNAs) are key building blocks enabling hardware complexity reduction, performance enhancement and functionality extension. This paper…

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…