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A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select…

材料科学 · 物理学 2010-08-19 H. W. Schumacher

The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…

介观与纳米尺度物理 · 物理学 2023-06-08 Miklós Csontos , Yannik Horst , Nadia Jimenez Olalla , Ueli Koch , Ivan Shorubalko , András Halbritter , Juerg Leuthold

We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We…

介观与纳米尺度物理 · 物理学 2023-12-29 Yu. Dzhezherya , P. Polynchuk , A. Kravets , V. Korenivski

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…

We propose a magnetostirring protocol to create persistent currents on an annular system. Under this protocol, polar bosons confined in a three-well ring circuit reach a state with high average circulation. We model the system with an…

Recently we demonstrated experimentally that microwave oscillators based on the time delay feedback provided by traveling spin waves could operate as reservoir computers. In the present paper, we extend this concept by adding the feature of…

应用物理 · 物理学 2021-06-30 Stuart Watt , Mikhail Kostylev , Alexey B. Ustinov , Boris A. Kalinikos

With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…

应用物理 · 物理学 2017-06-07 Ming-Han Tsai , Po-Hung Lin , Kuo-Feng Huang , Hsiu-Hau Lin , Chih-Huang Lai

Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…

介观与纳米尺度物理 · 物理学 2016-12-21 Cheng-Chih Hsieh , Anupam Roy , Yao-Feng Chang , Davood Shahrjerdi , Sanjay K. Banerjee

Quantum machine learning algorithms based on parameterized quantum circuits are promising candidates for near-term quantum advantage. Although these algorithms are compatible with the current generation of quantum processors, device noise…

量子物理 · 物理学 2023-10-11 André Melo , Nathan Earnest-Noble , Francesco Tacchino

We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…

材料科学 · 物理学 2015-06-22 Farnood Merrikh-Bayat , Brian Hoskins , Dmitri B. Strukov

The protection of qubit coherence is an essential task in order to build a practical quantum computer able to manipulate, store and read quantum information with a high degree of fidelity. Recently, it has been proposed to increase the…

量子物理 · 物理学 2022-05-26 Sylvain Bertaina , Hervé Vezin , Hans De Raedt , Irinel Chiorescu

Improving coherence times of quantum bits is a fundamental challenge in the field of quantum computing. With long-lived qubits it becomes, however, inefficient to wait until the qubits have relaxed to their ground state after completion of…

We propose a dynamical approach to quantum memories using a synchronous oscillator-cavity model, in which the coupling is shaped in time to provide the optimum interface to a symmetric input pulse. This overcomes the known difficulties of…

量子物理 · 物理学 2014-05-09 Q. Y. He , M. D. Reid , P. D. Drummond

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…

材料科学 · 物理学 2015-05-28 Niladri N. Mojumder , David W. Abraham , Kaushik Roy , D. C. Worledge

We present a model for implementing fast entangling gates (${\sim}1~\mu$s) with ultra-fast pulses in arbitrarily long ion chains, that requires low numbers of pulses and can be implemented with laser repetition rates well within…

量子物理 · 物理学 2021-01-14 Zain Mehdi , Alexander K. Ratcliffe , Joseph J. Hope

High-speed magnetization switching of a nanomagnet is necessary for faster information processing. The ballistic switching by a pulsed magnetic filed is a promising candidate for the high-speed switching. It is known that the switching…

介观与纳米尺度物理 · 物理学 2023-05-18 Toshiki Yamaji , Hiroshi Imamura

In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…

新兴技术 · 计算机科学 2026-01-14 Valeriy A. Slipko , Alon Ascoli , Fernando Corinto , Yuriy V. Pershin

We show a pulse-efficient circuit transpilation framework for noisy quantum hardware. This is achieved by scaling cross-resonance pulses and exposing each pulse as a gate to remove redundant single-qubit operations with the…

量子物理 · 物理学 2022-03-08 Nathan Earnest , Caroline Tornow , Daniel J. Egger

We demonstrate a dual-rail optical Raman memory inside a polarization interferometer; this enables us to store polarization-encoded information at GHz bandwidths in a room-temperature atomic ensemble. By performing full process tomography…

We present a randomized dynamical decoupling (DD) protocol that can improve the performance of any given deterministic DD, by using no more than two additional pulses. Our construction is implemented by probabilistically applying sequences…

量子物理 · 物理学 2024-11-07 Changhao Yi , Leeseok Kim , Milad Marvian
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