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相关论文: $nu=5/2$ Fractional Quantum Hall State in Low-Mobi…

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The evolution of the fractional quantum Hall state at filling 5/2 is studied in density tunable two-dimensional electron systems formed in wide wells in which it is possible to induce a transition from single to two subband occupancy. In 80…

介观与纳米尺度物理 · 物理学 2012-04-16 J. Nuebler , B. Friess , V. Umansky , B. Rosenow , M. Heiblum , K. v. Klitzing , J. Smet

The fractional quantum Hall effect is observed at low field, in a regime where the cyclotron energy is smaller than the Coulomb interaction. The nu=5/2 excitation gap is measured to be 262+/-15 mK at ~2.6 T, in good agreement with previous…

介观与纳米尺度物理 · 物理学 2008-04-10 C. R. Dean , B. A. Piot , P. Hayden , S. Das Sarma , G. Gervais , L. N. Pfeiffer , K. W. West

We report quantitative measurements of the impact of alloy disorder on the $\nu=5/2$ fractional quantum Hall state. Alloy disorder is controlled by the aluminum content $x$ in the Al$_x$Ga$_{1-x}$As channel of a quantum well. We find that…

介观与纳米尺度物理 · 物理学 2015-10-28 Nianpei Deng , G. C. Gardner , S. Mondal , E. Kleinbaum , M. J. Manfra , G. A. Csáthy

We report magneto-transport measurements for the fractional quantum Hall state at filling factor $\nu=$ 5/2 as a function of applied parallel magnetic field ($B_{||}$). As $B_{||}$ is increased, the 5/2 state becomes increasingly…

介观与纳米尺度物理 · 物理学 2014-09-23 Yang Liu , S. Hasdemir , M. Shayegan , L. N. Pfeiffer , K. W. West , K. W. Baldwin

We compare the energy gap of the \nu=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate…

介观与纳米尺度物理 · 物理学 2015-05-30 W. Pan , N. Masuhara , N. S. Sullivan , K. W. Baldwin , K. W. West , L. N. Pfeiffer , D. C. Tsui

We report the observation of an even-denominator fractional quantum Hall (FQH) state at $\nu=1/4$ in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of $n_e=2.55\times10^{11}$…

介观与纳米尺度物理 · 物理学 2009-11-13 D. R. Luhman , W. Pan , D. C. Tsui , L. N. Pfeiffer , K. W. Baldwin , K. W. West

We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $\nu = $ 5/2 in the vicinity of the crossing between Landau levels (LLs)…

介观与纳米尺度物理 · 物理学 2012-03-06 Yang Liu , D. Kamburov , M. Shayegan , L. N. Pfeiffer , K. W. West , K. W. Baldwin

The fractional quantum Hall (FQH) effect at the filling factor $\nu=5/2$ was discovered in GaAs heterostructures more than 35 years ago. Various topological orders have been proposed as possible candidates to describe this FQH state. Some…

介观与纳米尺度物理 · 物理学 2023-08-23 Ken K. W. Ma , Michael R. Peterson , V. W. Scarola , Kun Yang

Theory predicts that quasiparticle tunneling between the counter-propagating edges in a fractional quantum Hall state can be used to measure the effective quasiparticle charge e* and dimensionless interaction parameter g, and thereby…

介观与纳米尺度物理 · 物理学 2008-05-18 Iuliana P. Radu , J. B. Miller , C. M. Marcus , M. A. Kastner , L. N. Pfeiffer , K. W. West

Theoretical results for the gaps of fractional quantum Hall states are substantially larger than experimental values determined from the activated behaviour of charge transport. The disparity in the case of the enigmatic nu = 5/2 state is…

介观与纳米尺度物理 · 物理学 2007-05-23 R. H. Morf , N. d'Ambrumenil

We have studied the $\nu=5/2$ fractional quantum Hall state in a density-tunable sample at extremely low electron densities. For the densities accessed in our experiment, the Landau level mixing parameter $\kappa$ spans the…

介观与纳米尺度物理 · 物理学 2017-08-08 N. Samkharadze , Dohyung Ro , L. N. Pfeiffer , K. W. West , G. A. Csáthy

Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…

介观与纳米尺度物理 · 物理学 2015-06-08 Sukret Hasdemir , Yang Liu , H. Deng , M. Shayegan , L. N. Pfeiffer , K. W. West , K. W. Baldwin

Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $\nu = 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B \sim$ 1.7 T and determined its dependence on tilted…

介观与纳米尺度物理 · 物理学 2015-06-04 Guangtong Liu , Chi Zhang , D. C. Tsui , Ivan Knez , Aaron Levine , R. R. Du , L. N. Pfeiffer , K. W. West

We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $\nu=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a…

介观与纳米尺度物理 · 物理学 2012-03-06 Yang Liu , J. Shabani , D. Kamburov , M. Shayegan , L. N. Pfeiffer , K. W. West , K. W. Baldwin

Interesting non-Abelian states, e.g., the Moore-Read Pfaffian and the anti-Pfaffian, offer candidate descriptions of the $\nu = 5/2$ fractional quantum Hall state. But the significant controversy surrounding the nature of the $\nu = 5/2$…

Electrons in two dimensions and strong magnetic fields effectively lose their kinetic energy and display exotic behavior dominated by Coulomb forces. When the ratio of electrons to magnetic flux quanta in the system is near 5/2, the unique…

介观与纳米尺度物理 · 物理学 2015-05-19 Vivek Venkatachalam , Amir Yacoby , Loren Pfeiffer , Ken West

Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow…

介观与纳米尺度物理 · 物理学 2009-11-13 R. L. Willett , M. J. Manfra , L. N. Pfeiffer , K. W. West

Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high…

介观与纳米尺度物理 · 物理学 2015-05-18 J. Shabani , Y. Liu , M. Shayegan

The Landau level mixing is the key in understanding the mysterious $5/2$ fractional quantum Hall effect in GaAs quantum well. Theoretical calculations with and without Landau level mixing show striking differences. However, the way to deal…

强关联电子 · 物理学 2024-05-08 Wenchen Luo , Muaath Abdulwahab , Xiang Liu , Hao Wang

Measurements in very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal reentrant $\nu=1$ integer quantum Hall states in the lowest Landau level near filling factors…

介观与纳米尺度物理 · 物理学 2012-07-20 Yang Liu , C. G. Pappas , M. Shayegan , L. N. Pfeiffer , K. W. West , K. W. Baldwin
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