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相关论文: Charge inhomogeneities and transport in semiconduc…

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We propose a model of carrier-mediated ferromagnetism in semiconductors that accounts for the temperature dependence of the carriers. The model permits analysis of the thermodynamic stability of competing magnetic states, opening the door…

材料科学 · 物理学 2010-11-09 A. G. Petukhov , Igor Zutic , Steven C. Erwin

This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic…

材料科学 · 物理学 2014-04-02 Tomasz Dietl , Hideo Ohno

Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both…

Interface-induced superconductivity has recently been achieved by stacking a magnetic topological insulator layer on an antiferromagnetic FeTe layer. However, the mechanism driving this emergent superconductivity remains unclear. Here, we…

Spin gapless semiconductors based Heusler alloys are the special class of materials due to their unique band structure, high spin polarization and high Curie temperature. These materials exhibit a distinct electronic structure: a nonzero…

Two recent electronic transport experiments from Columbia University and Harvard University have reported record high mobility and low channel densities in transition metal dichalcogenide (TMD) WSe$_2$ monolayers [J. Pack, et al.,…

介观与纳米尺度物理 · 物理学 2024-06-28 Yi Huang , Sankar Das Sarma

We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in…

强关联电子 · 物理学 2009-11-10 S. Das Sarma , E. H. Hwang

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

We study magnetic, transport and thermodynamic properties of the half-filled two-dimensional ($2D$) Hubbard model with layered distributed repulsive interactions using unbiased finite temperature quantum Monte Carlo simulations.…

强关联电子 · 物理学 2017-02-27 Rubem Mondaini , Thereza Paiva

The ferromagnetic transition in a diluted magnetic semiconductor with localized charge carriers is inevitably a percolation transition. In this work we theoretically study the correlation between this magnetic percolation and transport…

材料科学 · 物理学 2009-11-10 A. Kaminski , S. Das Sarma

We study the effects of disorder on strongly coupled compressible matter in 2+1 dimensions. Our system consists of a D3/D5 intersection at finite temperature and in the presence of a disordered chemical potential. We first study the impact…

高能物理 - 理论 · 物理学 2016-08-24 Mario Araujo , Daniel Arean , Javier M. Lizana

The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multi-quantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for…

介观与纳米尺度物理 · 物理学 2015-05-27 Christian Ertler , Walter Pötz

Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in…

介观与纳米尺度物理 · 物理学 2016-02-10 Song-Lin Li , Kazihito Tsukagoshi , Emanuele Orgiu , Paolo Samorì

Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…

介观与纳米尺度物理 · 物理学 2017-01-30 Kuei-Lin Chiu , Yang Xu

We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the…

介观与纳米尺度物理 · 物理学 2014-10-29 Michael Knap , Jay D. Sau , Bertrand I. Halperin , Eugene Demler

In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has…

Ambipolar transport is a commonly occurring theme in semimetals and semiconductors. Here we present an analytical formulation of the conductivity for a two-band system. Electron and hole carrier densities and their respective conductivities…

We theoretically consider transport properties of a normal metal (N)- superconducting semiconductor nanowire (S)-normal metal (N) structure (NSN) in the context of the possible existence of Majorana bound states in disordered…

介观与纳米尺度物理 · 物理学 2015-06-18 Alejandro M. Lobos , S. Das Sarma

We predict and demonstrate that a disorder induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality…

介观与纳米尺度物理 · 物理学 2014-08-04 Jinglei Ping , Indra Yudhistira , Navneeth Ramakrishnan , Sungjae Cho , Shaffique Adam , Michael S. Fuhrer

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…

介观与纳米尺度物理 · 物理学 2016-07-26 Di Wu , Xiao Li , Lan Luan , Xiaoyu Wu , Wei Li , Maruthi N. Yogeesh , Rudresh Ghosh , Zhaodong Chu , Deji Akinwande , Qian Niu , Keji Lai