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相关论文: Diffusion thermopower of a $p-$type Si/Si$_{1-x}$G…

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The low magnetic field diffusion thermopower of a high mobility GaAs-heterostructure has been measured directly on an electrostatically defined micron-scale Hall-bar structure at low temperature (T = 1.6 K) in the low magnetic field regime…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Maximov , M. Gbordzoe , H. Buhmann , L. W. Molenkamp , D. Reuter

This paper discusses a simple calculation for the diffusion thermopower of a transition metal ferromagnet. The main result of this calculation is that unlike in the case of a free-electron model, the diffusion thermopower S and its…

强关联电子 · 物理学 2007-05-23 P. K. Thiruvikraman

We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole…

介观与纳米尺度物理 · 物理学 2009-11-07 Yu. G. Arapov , G. A. Alshanskii , G. I. Harus , V. N. Neverov , N. G. Shelushinina , M. V. Yakunin , O. A. Kuznetsov

The diffusion of energy that is locally deposited into two-dimensional electron gases by Joule heating generates transverse voltages across devices with broken symmetry. For mesoscopic structures characterized by device dimensions…

介观与纳米尺度物理 · 物理学 2014-11-19 Stephan Rojek , Jürgen König

The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18-21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has…

介观与纳米尺度物理 · 物理学 2018-12-26 E. B. Olshanetsky , Z. D. Kvon , M. V. Entin , L. I. Magarill , A. Levin , G. M. Gusev , N. N. Mikhailov

We investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10…

介观与纳米尺度物理 · 物理学 2012-08-15 Hongki Min , E. H. Hwang , S. Das Sarma

The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing temperature while…

材料科学 · 物理学 2015-06-19 Z. Viskadourakis , M. L. Paramês , O. Conde , M. Zervos , J. Giapintzakis

Previous experimental work on a two-dimensional (2D) electron gas in a Si-on-sapphire device led to the conclusion that both conductivity and phonon drag thermopower $S^g$ are affected to the same relative extent by weak localization. The…

介观与纳米尺度物理 · 物理学 2009-10-31 A. Miele , R. Fletcher , E. Zaremba , Y. Feng , C. T. Foxon , J. J. Harris

This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…

强关联电子 · 物理学 2009-11-07 R. Fletcher , V. M. Pudalov , A. D. B. Radcliffe , C. Possanzini

At low temperature using thermodynamics of irreversible processes the general expressions for the temperature dependence of the thermopower in the case of the hopping conductivity for disordered materials are found. The account of influence…

无序系统与神经网络 · 物理学 2009-11-11 O. E. Parfenov , F. A. Shklyaruk

We have measured diffusion thermopower in a two-dimensional electron gas at low temperature ($T$=40 mK) in the field range 0 $<B<$ 3.4 T, by employing the current heating technique. A Hall bar device is designed for this purpose, which…

介观与纳米尺度物理 · 物理学 2010-03-01 K. Fujita , A. Endo , S. Katsumoto , Y. Iye

A simple hot electron thermocouple is realized in a two-dimensional electron system (2DES) and used to measure the diffusion thermopower of the 2DES at zero magnetic field. This hot electron technique, which requires no micron-scale…

介观与纳米尺度物理 · 物理学 2009-07-27 W. E. Chickering , J. P. Eisenstein , J. L. Reno

This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior…

无序系统与神经网络 · 物理学 2007-05-23 R. Fletcher , V. M. Pudalov , A. D. B. Radcliffe , C. Possanzini

We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion $S^{d}$ and the phonon-drag $S^{g}$ contributions to the thermopower. We…

凝聚态物理 · 物理学 2007-05-23 M. Tsaousidou , P. N. Butcher , P. A. Crump , R. J. Hyndman , B. L. Gallagher

Motivated by recent experiments [1-3] we calculate the thermopower of graphene incorporating the energy dependence of various transport scattering times. We find that scattering by screened charged impurities gives a reasonable explanation…

介观与纳米尺度物理 · 物理学 2009-12-29 E. H. Hwang , E. Rossi , S. Das Sarma

We present thermopower measurements on a high electron mobility two-dimensional electron gas (2DEG) in a thin suspended membrane.We show that the small dimension of the membrane substantially reduces the thermal conductivity compared to…

介观与纳米尺度物理 · 物理学 2015-06-03 M. Schmidt , G. Schneider , Ch. Heyn , A. Stemmann , W. Hansen

We investigated thermoelectric power $S(T)$ of MgB$_{2-x}$Be$_{x}$ ($x=0$, 0.2, 0.3, 0.4, and 0.6). $S(T)$ decreases systematically with $x$, suggesting that the hole density increases. Our band calculation shows that the increase occurs in…

超导电性 · 物理学 2009-11-07 J. S. Ahn , E. S. Choi , W. Kang , D. J. Singh , E. J. Choi

In this work, we study the thermodynamic properties on a non--commutative background via gravitational gauge field potentials. This procedure is accomplished after contracting de Sitter (dS) group, $\mathrm{SO}(4,1)$, with the Poincar\`e…

高能物理 - 理论 · 物理学 2023-02-07 A. A. Araújo Filho , S. Zare , P. J. Porfírio , J. Kříž , H. Hassanabadi

We calculate thermopower of clean and impure bilayer graphene systems. Opening a band gap through the application of an external electric field is shown to greatly enhance the thermopower of bilayer graphene, which is more than four times…

材料科学 · 物理学 2015-05-18 Lei Hao , T. K. Lee

We report giant thermopower S = 2.5 mV/K in CoSbS single crystals, a material that shows strong high-temperature thermoelectric performance when doped with Ni or Se. Changes of low temperature thermopower induced by magnetic field point to…

强关联电子 · 物理学 2020-09-14 Qianheng Du , Milinda Abeykoon , Yu Liu , G. Kotliar , C. Petrovic
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