相关论文: The role of electron-electron scattering in spin t…

We investigate spin transport in InSb/InAlSb heterostructure using the Monte Carlo approach, generalized by including density matrix description of spin for taking spin dynamics into account. In addition to the dominant Dyakonov-Perel (DP)…

We argue that in the ensemble Monte Carlo approach, the spin decoherence caused by electron-electron interactions in n-type bulk GaAs at room temperature, according to Dyakonov-Perel theory, is mainly induced by the electron density while…

We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…

We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…

Spin transport properties of a spin-polarized two-dimensional electron gas are studied in the presence of electron-electron interactions. Longitudinal and transverse spin diffusion coefficients are calculated with the quantum transport…

Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron--nonmagnetic-impurity, electron-phonon,…

A method for Monte Carlo simulation of 2D spin-polarized electron transport in III-V semiconductor heterojunction FETs is presented. In the simulation, the dynamics of the electrons in coordinate and momentum space is treated…

The influence of electron-electron scattering on the distribution function and transport characteristics of intrinsic monolayer graphene is investigated via an ensemble Monte Carlo simulation. Due to the linear dispersion relation in the…

The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…

We present an analytical study of the D'yakonov-Perel' spin relaxation time for degenerate electrons in a photo-excited electron-hole liquid in intrinsic semiconductors exhibiting a spin-split band structure. The D'yakonov-Perel' spin…

Prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of…

We simulated spin polarized transport of electrons along III-V nanowires and two dimensional III-V channels using semi classical Monte Carlo method. Properties of spin relaxation length have been investigated in different III-V zinc-blende…

Utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high mobility, low density two dimensional electron gas in a GaAs/Al0:35Ga0:65As heterostructure in dependence on temperature from 1.5 K to 30 K.…

We have set up a set of many-body kinetic Bloch equations with spacial inhomogeneity. We reexamined the widely adopted quasi-independent electron model and showed the inadequacy of this model in studying the spin transport. We further…

We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…

The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped…

Spin accumulation is a crucial but imprecise concept in spintronics. In metal-based spintronics it is characterized in terms of semiclassical distribution functions. In semiconductors with a strong spin-orbit coupling the spin accumulation…

Spintronics is an emerging paradigm with the aim to replace conventional electronics by using electron spins as information carriers. Its utility relies on the magnitude of the spin-relaxation, which is dominated by spin- orbit coupling…

We investigate the in-plane spin relaxation of electrons due to the D'yakonov-Perel' and Elliot-Yafet mechanisms including the intra- and inter-valley processes in monolayer MoS$_2$. We construct the effective Hamiltonian for the conduction…

We investigate quantum coherence of electron spin transported through a semiconductor spintronic device, where spins are envisaged to be controlled by electrical means via spin-orbit interactions. To quantify the degree of spin coherence,…