相关论文: Tunneling Spin Injection into Single Layer Graphen…
Graphene sandwiched between semiconducting monolayers of ferromagnet Cr$_2$Ge$_2$Te$_6$ and transition-metal dichalcogenide WS$_2$ acquires both spin-orbit (SO), of valley-Zeeman and Rashba types, and exchange couplings. Using…
The conductance through single-layer graphene (SLG) and AA/AB-stacked bilayer graphene (BLG) junctions is obtained by taking into account band gap and bias voltage terms. First, we consider gapped SLG, while in between, they are connected…
In this work, we present a theoretical study of spin transport in a trilayer pseudospin-valve (PSV) heterostructure composed of electrode (L_l)/insulator/electrode (L_r). The insulating layer corrresponds to a semiconductor (SC) with a…
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through…
We derive a kinetic equation for the electrons moving on the surface of a three-dimensional topological insulator. Due to the helical nature of the excitations backward scattering is suppressed in the collision integral, and the spin…
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and…
We report on experiments of spin filtering through ultra-thin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with…
Recent demonstrations of magnetic ordering and spin transport in two-dimensional heterostructures have opened research venues in these material systems. In order to control and enhance the related physical phenomena, quantitative…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
We present results of tunneling studies of p-Hg_{1-x}Cd_{x}Te-oxide-Al structures with 0.165<x<0.2 in a magnetic field up to 6 T. The tunneling conductivity oscillations resulting from the Landau quantization of the energy spectrum in the…
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is…
A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can be marginal or relevant. Relevant interactions can result in…
A proposal to detect the purported canted antiferromagnet order for the $\nu=0$ quantum Hall state of graphene based on a two-terminal spin transport setup is theoretically discussed. In the presence of a magnetic field normal to the…
Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit…
We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is…
Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in…
We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt…