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We investigate the Mott transitions in two-band Hubbard models with different bandwidths. Applying dynamical mean field theory, we discuss the stability of itinerant quasi-particle states in each band. We demonstrate that separate Mott…

强关联电子 · 物理学 2009-11-10 Akihisa Koga , Norio Kawakami , T. M. Rice , Manfred Sigrist

We apply the density-matrix renormalization group (DMRG) method to a one-dimensional Hubbard model that lacks Umklapp scattering and thus provides an ideal case to study the Mott-Hubbard transition analytically and numerically. The model…

强关联电子 · 物理学 2021-12-22 Florian Gebhard , Örs Legeza

The multiorbital Hubbard model is expressed in terms of quantum phase variables (``slave rotors'') conjugate to the local charge, and of auxiliary fermions, providing an economical representation of the Hilbert space of strongly correlated…

强关联电子 · 物理学 2009-11-10 Serge Florens , Antoine Georges

We examine the orbital-selective Mott transition in the non-hybridized two-band Hubbard model using the dynamical mean-field theory. We find that the orbital-selective Mott transition could be quantitatively depicted by the {local two-qubit…

强关联电子 · 物理学 2024-07-19 Yuekun Niu , Yu Ni , Haishan Zhang , Liang Qiu , Jianli Wang , Leiming Chen , Yun Song , Shiping Feng

We use the Random Dispersion Approximation (RDA) to study the Mott-Hubbard transition in the Hubbard model at half band filling. The RDA becomes exact for the Hubbard model in infinite dimensions. We implement the RDA on finite chains and…

强关联电子 · 物理学 2008-11-27 S. Ejima , F. Gebhard , R. M. Noack

Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible…

介观与纳米尺度物理 · 物理学 2024-08-21 S. W. Schmid , L. Pósa , T. N. Török , B. Sánta , Z. Pollner , G. Molnár , Y. Horst , J. Volk , J. Leuthold , A. Halbritter , M. Csontos

We study analytically the Mott transition of the N-orbital Hubbard model using dynamical mean-field theory and a low-energy projection onto an effective Kondo model. It is demonstrated that the critical interaction at which the insulator…

强关联电子 · 物理学 2009-11-07 S. Florens , A. Georges , G. Kotliar , O. Parcollet

We address how the nature of linearly dispersing edge states of two dimensional (2D) topological insulators evolves with increasing electron-electron correlation engendered by a Hubbard like on-site repulsion $U$ in finite ribbons of two…

强关联电子 · 物理学 2012-06-26 Amal Medhi , Vijay B. Shenoy , H. R. Krishnamurthy

We develop a variational wave function for the ground state of a one-dimensional bosonic lattice gas. The variational theory is initally developed for the quantum rotor model and later on extended to the Bose-Hubbard model. This theory is…

凝聚态物理 · 物理学 2009-11-10 J. J. Garcia-Ripoll , J. I. Cirac , P. Zoller , C. Kollath , U. Schollwoeck , J. von Delft

In the binary-alloy with composition A$_x$B$_{1-x}$ of two atoms with ionic energy scales $\pm\Delta$, an apparent Ander- son insulator (AI) is obtained as a result of randomness in the position of atoms. Using our recently developed…

强关联电子 · 物理学 2019-01-09 Elaheh Adibi , Alireza Habibi , S. A. Jafari

We consider the one-band Hubbard model on the square lattice by using variational and Green's function Monte Carlo methods, where the variational states contain Jastrow and backflow correlations on top of an uncorrelated wave function that…

强关联电子 · 物理学 2016-11-17 Luca F. Tocchio , Federico Becca , Sandro Sorella

We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak…

强关联电子 · 物理学 2010-03-01 Milos M. Radonjic , D. Tanaskovic , V. Dobrosavljevic , K. Haule

We investigate the quasi-particle and transport properties of a model describing interacting Dirac and Weyl semimetals in the presence of local Hubbard repulsion $U$, where we explicitly include a deviation from the linearity of the…

强关联电子 · 物理学 2025-03-18 Arianna Poli , Niklas Wagner , Max Fischer , Alessandro Toschi , Giorgio Sangiovanni , Sergio Ciuchi

The combination of bandstructure theory in the local density approximation with dynamical mean field theory was recently successfully applied to V$_2$O$_3$ -- a material which undergoes the f amous Mott-Hubbard metal-insulator transition…

强关联电子 · 物理学 2009-11-10 K. Held , J. W. Allen , V. I. Anisimov , V. Eyert , G. Keller , H. -D. Kim , S. -K. Mo , D. Vollhardt

The experimentally established phase diagram of the half-filled Hubbard model features the existence of three distinct finite-temperature regimes, separated by extended crossover regions. A number of crossover lines can be defined to span…

强关联电子 · 物理学 2013-08-29 J. Vucicevic , H. Terletska , D. Tanaskovic , V. Dobrosavljevic

We use the constrained random phase approximation (cRPA) method to calculate the Hubbard $U$ parameter in four one-dimensional magnetic transition metal atom oxides of composition XO$_2$ (X = Mn, Fe, Co, Ni) on Ir(100). In addition to the…

材料科学 · 物理学 2022-08-31 J. Goikoetxea , C. Friedrich , G. Bihlmayer , S. Blügel , A. Arnau , M. Blanco-Rey

High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

The Mott transition is observed experimentally in materials that are magnetically frustrated so that long-range order does not hide the Mott transition at finite temperature. The Hubbard model on the triangular lattice at half-filling is a…

强关联电子 · 物理学 2023-04-03 P. -O. Downey , O. Gingras , J. Fournier , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

Mott transition plays a key role in strongly correlated physics but its nature is not yet fully understood. Motivated by recent development of Schwinger boson approach for the Kondo lattice, we propose in this work a novel slave fermion…

强关联电子 · 物理学 2022-11-18 Zhuoqing Long , Jiangfan Wang , Yi-feng Yang