相关论文: Nonlinear magnetic field dependence of spin polari…
Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems,…
By theoretically calculating the interacting spin susceptibility of a two-dimensional electron system in the presence of finite spin polarization, we show that the extensively employed technique of measuring the 2D spin susceptibility by…
We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the…
We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons'…
We consider a disordered two-dimensional electron gas with spin-orbit coupling placed in a perpendicular magnetic field and calculate the magnitude and direction of the electric-field-induced spin polarization. We find that in strong…
We consider the magnetic response of a two-dimensional electron gas (2DEG) with a spin-orbit interaction to a long-wave-length electromagnetic excitation. We observe that the transverse electric field creates spin polarization perpendicular…
We have experimentally studied the non-equilibrium transport in low-density clean 2D electron systems at mesoscopic length scales. At zero magnetic field (B), a double-peak structure in the non-linear conductance was observed close to the…
In this paper, current-induced spin polarization for two-dimensional electron gas with a general spin-orbit interaction is investigated. For isotropic energy spectrum, the in-plane current-induced spin polarization is found to be dependent…
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…
We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role…
We numerically study the magnetization of small metallic clusters. The magnetic susceptibility is enhanced for lower electronic densities due to the stronger influence of electron-electron interactions. The magnetic susceptibility…
Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field $H_{sat}$ required to saturate the conductivity to its high-field value and the magnetic field $H_s$ needed to…
The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are…
The experimentally observed amazing dependence of a critical magnetic field Bc of a full field-induced spin polarization and a spin susceptibility of a two-dimensional electron gas on the electron density can be explained by screening of…
We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic…
The magnetic field B_c, in which the electrons become fully spin-polarized, is found to be proportional to the deviation of the electron density from the zero-field metal-insulator transition in a two-dimensional electron system in silicon.…
There is controversy as to whether a one-dimensional (1D) electron gas can spin polarise in the absence of a magnetic field. Together with a simple model, we present conductance measurements on ultra low-disorder quantum wires supportive of…
We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility…
Density-functional calculations using an exact exchange potential for a two-dimensional electron gas (2DEG) formed in a GaAs single quantum well predict the existence of a spin-polarized phase, when an excited subband becomes slightly…
In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*\mu_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct…