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相关论文: Theory of the Lightly Doped Mott Insulator

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We study the electronic structure of the doped paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model. Throughout we use the moderately high temperature T=0.33t, where the spin correlation…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

In the framework of cluster perturbation theory for the 2D Hubbard and Hubbard-Holstein models at low hole doping we have studied the effect of local and short-range correlations in strongly correlated systems on the anomalous features in…

强关联电子 · 物理学 2019-02-05 V. I. Kuz'min , S. V. Nikolaev , S. G. Ovchinnikov

We study the evolution of a Mott-Hubbard insulator into a correlated metal upon doping in the two-dimensional Hubbard model using the Cellular Dynamical Mean Field Theory. Short-range spin correlations create two additional bands apart from…

强关联电子 · 物理学 2016-08-16 B. Kyung , S. S. Kancharla , D. Sénéchal , A. -M. S. Tremblay , M. Civelli , G. Kotliar

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

The electronic structure of the lightly hole-doped triangular-lattice moir\'e Hubbard model is studied within cluster perturbation theory (CPT) using 13-site clusters for a fixed doping concentration $p=1/13$ varying the Coulomb parameter…

强关联电子 · 物理学 2025-09-26 V. I. Kuz'min , M. A. Visotin , S. G. Ovchinnikov

We have investigated the evolution of the electronic properties of the t-t'-U Hubbard model with hole doping and temperature. Due to the shape of the Fermi surface, scattering from short wavelength spin fluctuations leads to strongly…

强关联电子 · 物理学 2008-02-03 Joachim Altmann , Wolfram Brenig , Arno P. Kampf

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

We find Marginal Fermi Liquid (MFL) like behavior in the Hubbard model on a square lattice for a range of hole doping and on-site interaction parameter U. Thereby we use a self-consistent projection operator method. It enables us to compute…

强关联电子 · 物理学 2009-11-11 Y. Kakehashi , P. Fulde

We study the phase diagram of a one-dimensional Hubbard model where, in addition to the standard nearest neighbor hopping $t$, we also include a next-to-nearest neighbor hopping $t'$. For strong enough on-site repulsion, this model has a…

凝聚态物理 · 物理学 2009-10-28 Michele Fabrizio

Using the dynamical cluster approximation and quantum monte carlo we calculate the single-particle spectra of the Hubbard model with next-nearest neighbor hopping $t'$. In the underdoped region, we find that the pseudogap along the zone…

强关联电子 · 物理学 2007-05-23 Alexandru Macridin , Mark Jarrell , Thomas Maier , P. R. C. Kent , Eduardo D'Azevedo

Using the fluctuation exchange approximation of the one band Hubbard model, we discuss the origin of the changing Fermi surface volume in underdoped cuprate systems due to the transfer of occupied states from the Fermi surface to its…

凝聚态物理 · 物理学 2016-08-31 J. Schmalian , M. Langer , S. Grabowski , K. H. Bennemann

The interplay between charge and spin dynamics is at the heart of strongly correlated materials. Inspired by recent quantum simulation experiments, we develop a conserving diagrammatic method to describe the Fermi-Hubbard model for strong…

量子气体 · 物理学 2026-04-16 Magnus Callsen , Jens H. Nyhegn , Kristian Knakkergaard Nielsen , Georg M. Bruun

Implementing an improved method for analytic continuation and working with imaginary-time correlation functions computed using quantum Monte Carlo simulations, we resolve the single-particle dispersion relation and the density of states…

强关联电子 · 物理学 2025-08-08 Gabe Schumm , Shiwei Zhang , Anders W. Sandvik

We study the effect of carrier doping to the Mott insulator on the Penrose tiling, aiming at clarifying the interplay between quasiperiodicity and strong electron correlations. We numerically solve the Hubbard model on the Penrose-tiling…

强关联电子 · 物理学 2022-10-06 Shiro Sakai , Nayuta Takemori

We present a theory for the lightly doped t-J model which is of possible relevance for the normal state of underdoped cuprates. Starting from an arbitrary dimer covering of the plane an exact representation of the t-J Hamiltonian in terms…

强关联电子 · 物理学 2019-10-02 R. Eder

Many strongly correlated systems exhibit strange metallic behavior in certain parameter regimes characterized by anomalous transport properties that are irreconcilable with a Fermi-liquid-like description in terms of quasiparticles. The…

强关联电子 · 物理学 2024-10-29 Andrew A. Allocca

We compute high-resolution angle-resolved photoemission spectroscopy of the Hubbard model using the unbiased determinant quantum Monte Carlo algorithm, revealing an asymmetry between electron and hole doping. Electron doping exhibits more…

强关联电子 · 物理学 2025-06-23 Wen O. Wang , Edwin W. Huang , Brian Moritz , Thomas P. Devereaux

We present determinant quantum Monte Carlo simulations of the hole-doped single-band Hubbard-Holstein model on a square lattice, to investigate how quasiparticles emerge when doping a Mott insulator (MI) or a Peierls insulator (PI). The MI…

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