相关论文: Charge writing at the LaAlO3/SrTiO3 surface
Modern electronic devices are unthinkable without the well-controlled formation of interfaces at heterostructures. These often involve at least one amorphous material. Modeling such interfaces poses a significant challenge, since a…
We report the direct observation of the electric pulse induced resistance-change (EPIR) effect at the nano scale on La1-xSrxMnO3 (LSMO) thin films by the current measurement AFM technique. After a switching voltage of one polarity is…
While piezoelectrics and ferroelectrics are playing a key role in many everyday applications, there are still a number of open questions related to the physics of those materials. In order to foster the understanding of piezoelectrics and…
Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study…
Atomic force microscopy (AFM) is a key tool for characterising nanoscale structures, with functionalised tips now offering detailed images of the atomic structure. In parallel, AFM simulations using the particle probe model provide a…
We formulate a model for magnetic and superconducting ordering at LaAlO3/SrTiO3 interfaces containing both localized magnetic moments and itinerant electrons. Though these both originate in Ti 3d orbitals, the former may be due to electrons…
Previous efforts to directly write conductive metals have been narrowly focused on nanoparticle ink suspensions that require aggressive sintering (>200 {\deg}C) and result in low-density, small-grained agglomerates with electrical…
We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric…
The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in…
The use of electrophoretic forces to tune friction at material-nanoparticle-liquid interfaces with static or low frequency (0.6-50 mHz) electric fields is reported for the first time. External electric fields were employed to reposition…
We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and…
We report the effect of $\delta$-doping at LaAlO$_{3}$/SrTiO$_{3}$ interface with LaMnO$_{3}$ monolayers on the photoconducting (PC) state. The PC is realized by exposing the samples to broad band optical radiation of a quartz lamp and 325…
This paper analyzes how the ferroelectric properties of cubic-like BiFeO$_3$ nanoparticles are affected by different terminations and charge distributions at the surface using ab-initio-based atomistic computational experiments. Our…
La$_3$Ni$_2$O$_7$, a bilayer nickelate with Ruddlesden-Popper structure, undergoes a pressure-induced structural transition from a tilted Amam phase to an untilted Fmmm (or I4/mmm) phase near 10-15 GPa, concomitant with the emergence of…
We demonstrate that an A-type antiferromagnetic (AFM) state of Pr{0.5}Sr{0.5}MnO{3} exhibits a novel charge ordering which governs the transport property. This charge ordering is stripe-like, being characterized by a wave vector q ~…
Manipulating spin-orbit coupling (SOC) is important for devices such as spin-orbit torque based memory and its understanding is neccessary to answer several fundamental open questions in triplet state superconductivity, topological…
The time-resolved photoconductance of amorphous and crystalline LaAlO$_3$/SrTiO$_3$ interfaces, both hosting an interfacial 2-dimensional electron gas, is investigated under irradiation by variable-wavelengths, visible or ultraviolet…
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…
First principles calculations reveal that adding a metallic overlayer on LaAlO3/SrTiO3(001) eliminates the electric field within the polar LaAlO3 film and thus suppresses the thickness-dependent insulator-to-metal transition observed in…
Al2O3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. Al2O3 films deposited on semiconductors usually exhibit amorphous due to lattice mismatch. Compared to two-dimensional graphene, MoS2 is a typical…