相关论文: The dominant spin relaxation mechanism in compound…
We report spin valve behavior in an organic nanowire consisting of three layers - cobalt, Alq3 and nickel - all nominally 50 nm in diameter. Based on the data, we conclude that the dominant spin relaxation mechanism in Alq3 is the…
We have studied theoretically the electron spin relaxation in semiconductor quantum dots via interaction with nuclear spins. The relaxation is shown to be determined by three processes: (i) -- the precession of the electron spin in the…
Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g. from multiple traps, site-energy disorder and/or…
Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron--nonmagnetic-impurity, electron-phonon,…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
The hyperfine coupling between the spin of a charge carrier and the nuclear spin bath is a predominant channel for the carrier spin relaxation in many organic semiconductors. We theoretically investigate the hyperfine-induced spin…
The coupling between electronic spins and lattice vibrations is fundamental for driving relaxation in magnetic materials. The debate over the nature of spin-phonon coupling dates back to the 40's, but the role of spin-spin, spin-orbit and…
We investigate the influence of an external magnetic field on spin phase relaxation of single electrons in semiconductor quantum dots induced by the hyperfine interaction. The basic decay mechanism is attributed to the dispersion of local…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…
Spintronics is an emerging paradigm with the aim to replace conventional electronics by using electron spins as information carriers. Its utility relies on the magnitude of the spin-relaxation, which is dominated by spin- orbit coupling…
We analyze spin-dependent carrier dynamics due to incoherent electron-phonon scattering, which is commonly referred to as Elliott-Yafet (EY) spin-relaxation mechanism. For this mechanism one usually distinguishes two contributions: (1) from…
Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…
Mechanisms of 'environmental decoherence' such as surface scattering, Elliot-Yafet process and precession mechanisms, as well as their influence on the spin phase relaxation are considered and compared. It is shown that the 'spin ballistic'…
The spin dynamics and spin relaxation of itinerant electrons in quantum wires with spin-orbit coupling is reviewed. We give an introduction to spin dynamics, and review spin-orbit coupling mechanisms in semiconductors. The spin diffusion…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
We investigate how spins relax in intrinsic graphene. The spin-orbit coupling arises from the band structure and is enhanced by ripples. The orbital motion is influenced by scattering centers and ripple-induced gauge fields. Spin relaxation…
We show that the electric field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from…
The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times acquires a…