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We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…

介观与纳米尺度物理 · 物理学 2011-10-06 Qiuzi Li , E. H. Hwang , E. Rossi , S. Das Sarma

Charge carriers in a graphene sheet, a single layer of graphite, exhibit much distinctive characteristics to those in other two-dimensional electronic systems because of their chiral nature. In this report, we focus on the observation of…

介观与纳米尺度物理 · 物理学 2012-05-28 Dong-Keun Ki , Dongchan Jeong , Jae-Hyun Choi , Kee-Su Park , Hu-Jong Lee

The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and…

介观与纳米尺度物理 · 物理学 2009-12-02 M. M. Fogler

Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

材料科学 · 物理学 2008-05-11 S. Adam , S. Das Sarma

We have investigated transport through graphene Andreev interferometers exhibiting reentrance of the superconducting proximity effect. We observed a crossover in the Andreev conductance oscillations as a function of gate voltage ($V_{BG}$).…

介观与纳米尺度物理 · 物理学 2013-04-25 Fabio Deon , Sandra Šopić , Alberto F. Morpurgo

We present a theoretical description of the electronic properties of graphene in the presence of disorder, electron-electron interactions, and particle-hole symmetry breaking. We show that while particle-hole asymmetry, long-range Coulomb…

强关联电子 · 物理学 2009-11-11 N. M. R. Peres , F. Guinea , A. H. Castro Neto

This work theoretically analyzes electronic ordering in AA-stacked bilayer graphene and the role of the Coulomb interaction in these many-body phenomena. Using the random phase approximation to account for screening, we find intra-layer…

超导电性 · 物理学 2024-10-15 A. O. Sboychakov , A. L. Rakhmanov , A. V. Rozhkov

We study Coulomb drag in double-layer graphene near the Dirac point. A particular emphasis is put on the case of clean graphene, with transport properties dominated by the electron-electron interaction. Using the quantum kinetic equation…

介观与纳米尺度物理 · 物理学 2013-06-26 M. Schütt , P. M. Ostrovsky , M. Titov , I. V. Gornyi , B. N. Narozhny , A. D. Mirlin

We model disorder in graphene by random impurities treated in a coherent-potential approximation. Using the analytically solvable Lloyd model for the disorder distribution, we show that the temperature dependence of the minimum conductivity…

介观与纳米尺度物理 · 物理学 2012-03-13 Michael Sentef , Marcus Kollar , Arno P. Kampf

For a system of two spatially separated monoatomic graphene layers encapsulated in hexagonal boron nitride, we consider the drag effect between charge carriers in the Fermi liquid regime. Commonly, the phenomenon is described in terms of an…

介观与纳米尺度物理 · 物理学 2012-10-02 Bruno Amorim , Jürgen Schiefele , Fernando Sols , Francisco Guinea

We have analyzed Coulomb drag between currents of interacting electrons in two parallel one-dimensional conductors of finite length $L$ attached to external reservoirs. For strong coupling, the relative fluctuations of electron density in…

凝聚态物理 · 物理学 2009-10-31 Vadim Ponomarenko , Dmitri Averin

Heating of carriers in an intrinsic graphene under dc electric field is considered taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions due to thermal…

介观与纳米尺度物理 · 物理学 2015-05-13 O. G. Balev , F. T. Vasko , V. Ryzhii

We consider the problem of screening of an electrically charged impurity in a clean graphene sheet. When electron-electron interactions are neglected, the screening charge has a sign opposite to that of the impurity, and is localized near…

强关联电子 · 物理学 2007-11-29 Rudro R. Biswas , Subir Sachdev , Dam T. Son

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…

介观与纳米尺度物理 · 物理学 2015-03-13 Tony Low , F. Guinea

Electron scattering problem in the monolayer graphene with short-range impurities is considered. The main novel element in the suggested model is the band asymmetry of the defect potential in the 2+1-dimensional Dirac equation. This…

介观与纳米尺度物理 · 物理学 2013-05-29 Natalie E. Firsova

We study the Coulomb drag transresistivity between graphene layers employing the finite temperature density response function. We analyze the Coulomb coupling between the two layers and show that a universal scaling behavior, independent of…

介观与纳米尺度物理 · 物理学 2007-05-23 Irene D'Amico , S. G. Sharapov

Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron…

介观与纳米尺度物理 · 物理学 2015-05-18 Jesse Berezovsky , Robert M Westervelt

The decoration of graphene samples with adatoms or nanoparticles leads to the enhancement of spin-orbit interactions as well as to the introduction of symmetry-breaking effects that could have drastic effects on spin and electronic…

介观与纳米尺度物理 · 物理学 2015-04-13 Mahmoud M. Asmar , Sergio E. Ulloa

We study Coulomb drag in a system consisting of a carbon nanotube (CNT) and monolayer graphene. Within the Fermi liquid theory we calculate the drag resistivity and find that the dimensional mismatch of the system components leads to a…

介观与纳米尺度物理 · 物理学 2020-02-05 S. M. Badalyan , A. P. Jauho

We suggest a simple model of disorder in graphene assuming that there are randomly distributed positive and negative centers with equal concentration $N/2$ in the bulk of silicon oxide substrate. We show that at zero gate voltage such…

介观与纳米尺度物理 · 物理学 2009-11-13 B. I. Shklovskii