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相关论文: Energy gap tuning in graphene on hexagonal boron n…

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We present a theoretical study of the structural and electronic properties of graphene monolayer functionalized with boron and nitrogen atoms substituting carbon atoms. Our study is based on the ab initio calculations in the framework of…

材料科学 · 物理学 2013-07-29 Magdalena Woinska , Karolina Z. Milowska , Jacek A. Majewski

Magic angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating.…

介观与纳米尺度物理 · 物理学 2021-07-21 Nikhil Tilak , Xinyuan Lai , Shuang Wu , Zhenyuan Zhang , Mingyu Xu , Raquel de Almeida Ribeiro , Paul C Canfield , Eva Y. Andrei

Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys…

The structural similarity between hexagonal boron nitride (h-BN) and graphene nanoribbons allows for the formation of heterojunctions with small chain stress. The combination of the insulation nature of the former and the quasi-metallic…

Bilayer graphene twisted by a small angle shows a significant charge modulation away from neutrality, as the charge in the narrow bands near the Dirac point is mostly localized in the regions of the Moir\'e pattern with $AA$ stacking. The…

介观与纳米尺度物理 · 物理学 2018-12-13 Francisco Guinea , Niels R. Walet

We study how the electronic structure of the bilayer graphene (BLG) is changed by electric field and strain from {\it ab initio} density-functional calculations using the LMTO and the LAPW methods. Both hexagonal and Bernal stacked…

材料科学 · 物理学 2010-03-10 B. R. K. Nanda , S. Satpathy

In this work we show, by means of a density functional theory formalism, that the simple physical contact between hydrogen terminated boron nitride surfaces gives rise to a metallic interface with free carries of opposite sign at each…

The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an…

介观与纳米尺度物理 · 物理学 2014-09-05 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer…

介观与纳米尺度物理 · 物理学 2009-02-03 Hassan Raza , Edwin C. Kan

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction…

介观与纳米尺度物理 · 物理学 2014-05-21 Menno Bokdam , Taher Amlaki , Geert Brocks , Paul J. Kelly

When hexagonal boron nitride (hBN) and graphene are aligned at zero or small twist angle, a moir\'e structure is formed due to the small lattice constant mismatch between the two structures. In this work, we analyze magnetic ordering…

强关联电子 · 物理学 2021-09-01 Maria Spethmann , Carsten Honerkamp , Dante M. Kennes

Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under a layer-asymmetric strain (where the upper layer…

介观与纳米尺度物理 · 物理学 2014-12-04 J. A. Crosse

A first-principles investigation of the electronic properties of boron nitride nanoribbons (BNNRs) having either armchair or zigzag shaped edges passivated by hydrogen with widths up to 10 nm is presented. Band gaps of armchair BNNRs…

材料科学 · 物理学 2008-08-14 Cheol-Hwan Park , Steven G. Louie

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $\Delta$ between the conduction and valence bands. In particular, a self…

介观与纳米尺度物理 · 物理学 2009-11-11 Edward McCann

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte…

介观与纳米尺度物理 · 物理学 2015-05-13 Kin Fai Mak , Chun Hung Lui , Jie Shan , Tony F. Heinz

In this work, we perform ab initio calculations, based on the density functional theory, of the effects on the graphene bilayer when we intercalate carbon atoms between the layers. We use the unit cell of the bilayer to construct larger…

介观与纳米尺度物理 · 物理学 2020-01-31 A. K. M. Pinto , N. F. Frazão , D. L. Azevedo , F. Moraes

Owing to the interaction between the layers, the twisted bilayer two-dimensional materials exhibit numerous unique optical and electronic properties different from the monolayer counterpart, and have attracted tremendous interests in…

介观与纳米尺度物理 · 物理学 2021-08-18 Yabin Ma , Tao Ouyang , Yuanping Chen , Yuee Xie

The interplay of twist and strain in bilayer graphene enables the formation of moir\'e patterns and narrow bands that host correlated and topological phases. While magic-angle twisted bilayer graphene has been widely studied, strain…

介观与纳米尺度物理 · 物理学 2026-03-10 Federico Escudero , Dong Wang , Pierre A. Pantaleón , Shengjun Yuan , Francisco Guinea , Zhen Zhan

We have investigated the electronic structure of charged bilayer and trilayer phoshporene using first-principles, density-functional-theory calculations. We find that the effective dielectric constant for an external electric field applied…

介观与纳米尺度物理 · 物理学 2017-08-09 Bukyoung Jhun , Cheol-Hwan Park

We performed calculations of electronic, optical and transport properties of graphene on hBN with realistic moir\'e patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be…

介观与纳米尺度物理 · 物理学 2015-11-05 G. J. Slotman , M. M. van Wijk , Pei-Liang Zhao , A. Fasolino , M. I. Katsnelson , Shengjun Yuan