相关论文: Electron spin coherence in metallofullerenes: Y, S…

The time-window for processing electron spin information (spintronics) in solid-state quantum electronic devices is determined by the spin-lattice (T1) and spin-spin (T2) relaxation times of electrons. Minimising the effects of spin-orbit…

The temperature dependence of the electron spin relaxation time in MgB2 is anomalous as it does not follow the temperature dependence of the resistivity above 150 K, it has a maximum around 400 K, and it decreases for higher temperatures.…

Interactions of electron spins with rotational degrees of freedom during collisions or with external fields are fundamental processes that limit the coherence time of spin gases. We experimentally study the decoherence of hot cesium spins…

We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced…

Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…

The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron…

The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…

We revisit the concepts of spin relaxation and spin decoherence of two level (spin-1/2) systems. From two toy-models, we clarify two issues related to the spin relaxation and decoherence: 1) For an ensemble of two-level particles each…

Electron spin dynamics are studied in Ga-doped ZnO single crystals by time-resolved Faraday and Kerr rotation spectroscopies. Long-lived spin coherence with two dephasing processes is discovered where the characteristic time is up to 5.2 ns…

We study evolution of electron spin coherence having non-homogeneous direction of spin polarization vector in semiconductor heterostructures. It is found that the electron spin relaxation time due to the D'yakonov-Perel' relaxation…

In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a…

A single electron floating on the surface of a condensed noble-gas liquid or solid can act as a spin qubit with ultralong coherence time, thanks to the extraordinary purity of such systems. Previous studies suggest that the electron spin…

The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically-protected spin-polarized states and can carry a very large current density. In addition, the intrinsic…

The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in…

We study the electronic spin relaxation effect in the hole-doped monolayer and bilayer transition-metal dichalcogenides in the presence of the crystal defects. We consider realistic models of the lattice vacancy and actually estimate the…

We consider two mechanisms of spin relaxation in disordered graphene. i) Spin relaxation due to curvature spin orbit coupling caused by ripples. ii) Spin relaxation due to the interaction of the electronic spin with localized magnetic…

The relaxation process of electron spin in systems of electrons interacting with piezoelectric deformation phonons that are mediated through spin-orbit interactions was interpreted from a microscopic point of view using the formula for the…

Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but…

Prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of…

Long spin relaxation times are a prerequisite for the use of spins in data storage or nanospintronics technologies. An atomic-scale solid-state realization of such a system is the spin of a transition metal atom adsorbed on a suitable…