相关论文: Spectroscopic investigation of quantum confinement…

We have measured near normal incidence far infrared (FIR) reflectivity spectra of a single crystal of TbMnO3 from 10K to 300K in the spectral range of 50 cm$^{-1}$ to 700 cm$^{-1}$. Fifteen transverse optic (TO) and longitudinal optic (LO)…

We demonstrate experimentally and support by a theoretical analysis an effect of asymmetric spectrum broadening, which results from doping of silver nanoparticles into a heavy-glass matrix, 90(0.5WO3-0.3SbPO4-0.2PbO)-10AgCl. The strong…

In this study, we demonstrate coherent optical excitation of the electronic Raman transition between the $1s\left(A_1\right)$ and $1s\left(E\right)$ split states of phosphorus donor in crystalline silicon. The dynamics of the generated…

Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si…

We present results of our study of polarized Raman scattering and infrared reflectivity of rhombohedral ceramic La_1-ySr_yMn_1-xM_xO_3 manganites in the temperature range between 77 and 320K. In our samples, a part of the Mn atoms is…

A polystyrene film spun onto polished silicon substrates was implanted with either nitrogen or argon ions using plasma immersion ion implantation (PIII) and subsequently investigated by X-ray and neutron reflectometry, UV-VIS and FTIR…

In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition…

The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material…

We report a comprehensive Raman study of the phonon behaviour in PdSe$_2$ in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon…

The temperature dependence of the first-order phonon mode of single crystal of Silicon (Si) is determined by Raman scattering in a broad temperature range of 4-623 K. Our studies reveal the anomalous red-shift of the Raman active phonon…

Plastic scintillators are a versatile and inexpensive option for particle detection, which is why the largest particle physics experiments, CMS and ATLAS, use them extensively in their calorimeters. One of their challenging aspects,…

Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by irradiation with 1.5 MeV Au2+ at a flux of 6.3x10^12 ions…

Traditional silicon-on-insulator (SOI) platform based on-chip photonic interconnects have limited energy-bandwidth scalability due to the optical non-linearity induced power constraints of the constituent photonic devices. In this paper, we…

A high quality amorphous silicon (a-Si) nanostructures has grown experimentally to study the origin of light emission and the quantum confinement effect in a-Si. The quantum confinement effect increases the band gap of material as the size…

Silicon nanocrystals (SiNCs) have been under active investigation in the last decades and have been considered as a promising candidate for many optoelectronic applications including highly-efficient solar cells. Some of the fundamental…

Confined microexplosions induced in silicon by powerful ultrashort laser pulses can lead to new Si phases. Some of these have not previously been observed via near-equilibrium compression of silicon. In this study, confocal Raman…

The structural, optical, morphological and nonlinear optical properties of Cu:ZnO spray-coated films are studied. The surface morphology of Cu:ZnO thin films turned out to be homogenous, crack free and well covered with pea-shaped grains.…

The ionization of xenon atoms subjected to 42fs, 800nm pulses of radiation from a Ti:Sapphire laser was investigated. In our experiments a maximum laser intensity of $\sim2\times 10^{15} \textrm{W}/\textrm{cm}^2$ was used. Xenon ions were…

We present a detailed temperature dependent Raman light scattering study of optical phonons in Ba{1-x}K{x}Fe{2}As{2} (x ~ 0.28, superconducting Tc ~ 29 K), Sr{1-x}K{x}Fe{2}As{2} (x ~ 0.15, Tc ~ 29 K) and non-superconducting BaFe{2}As{2}…

In this work, we investigate the ionization of silicon by electron impacts in hot plasmas. Our calculations of the cross sections and rates rely on the Coulomb-Born-Exchange, Binary-Encounter-Dipole and Distorted-Wave methods implemented in…