相关论文: A way to measure electron spin-flipping at F/N int…

We present a versatile method for detecting the presence and motion of a trapped domain wall in a narrow ferromagnetic layer using current-perpendicular-to-plane (CPP) giant magnetoresistance (MR). The CPP-MR response to small motions of…

The role played by interfaces in metallic multilayers is not only to change the momenta of incident electrons; their symmetry lowering also results in an enhancement of the effects of spin-orbit coupling, in particular the flipping of the…

In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP)…

The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…

In-situ, device level measurement of thermal mag-noise spectral linewidths in 60nm diameter CPP-GMR spin-valve stacks of IrMn/ref/Cu/free, with reference and free layer of similar CoFe/CoFeGe alloy, are used to simultaneously determine the…

Radiative transitions gamma + Delta(1232) -> N^* are discussed in the nonrelativistic quark model with spin-orbit corrections for the 70-plet L^P=1^- nucleon resonances N^*. The reaction gamma + N -> gamma + Delta is considered as a tool to…

We have determined the spin-memory-loss parameter, $\delta_{Co/Ru}$, by measuring the transmission of spin-triplet and spin-singlet Cooper pairs across Co/Ru interfaces in Josephson junctions and by Current-Perpendicular-to-Plane Giant…

From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021 - 0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of…

Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating…

Symmetry lowering at an interface leads to an enhancement of the effect of spin-orbit coupling and to a discontinuity of spin currents passing through the interface. This discontinuity is characterized by a "spin-memory loss" (SML)…

The complex surface impedance of a number of GdBa$_2$Cu$_3$O$_{7-\delta}$ single crystals has been measured at 10, 15 and 21 GHz using a cavity perturbation technique. At low temperatures a marked increase in the effective penetration depth…

This work evaluates the model dependence of the electric and Coulomb quadrupole amplitudes (E2, C2) in the predominantly M1 (magnetic dipole-quark spin flip) gamma* N -> Delta transition. Both the model-to-model dependence and the intrinsic…

We consider charge transport properties in realistic, fabricable, Ferromagnet/Superconductor spin valves having a layered structure $F_1/N/F_2/S$, where $F_1$ and $F_2$ denote the ferromagnets, $S$ the superconductor, and $N$ the normal…

Superconductor/ferromagnet (S/F) spin valve effect theories based on the S/F proximity phenomenon assume that the superconducting transition temperature Tc of F1/F2/S or F1/S/F2 trilayers for parallel magnetizations of the F1- and F2-layers…

Magnetoresistance measurements in the CPP geometry have been performed on single electrodeposited Co nanowires exchange biased on one side by a sputtered amorphous GdCo layer. This geometry allows the stabilization of a single domain wall…

Many proposed and realized spintronic devices involve spin injection and accumulation at an interface between a ferromagnet and a non-magnetic material. We examine the electric field, voltage profile, charge distribution, spin fluxes, and…

The spin-transfer torque (STT) in Co2MnSi(CMS)/Al/Co2MnSi spin-valve system with and without interfacial disorder is studied by a first-principles noncollinear wave-function-matching method. It is shown that in the case of clean interface…

At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can…

To develop new devices based on synthetic ferrimagnetic heterostructures, understanding the material's physical properties is pivotal. Here, the induced magnetic moment (IMM), magnetic exchange coupling, and spin textures are investigated…

The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to…