相关论文: Theory of exciton fine structure in semiconductor …
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…
Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and…
In order to discuss the exciton fine-structure of transition-metal dichalcogenides mono-layers, excitons are first defined in the subspace of electron- and hole states, including the lowest conduction band (LCB) and the uppermost valence…
We show theoretically and experimentally the existence of a new quantum interference(QI) effect between the electron-hole interactions and the scattering by a single Mn impurity. Theoretical model, including electron-valence hole…
We study theoretically effects of an anisotropic elastic strain on the exciton energy spectrum fine structure and optical selection rules in atom-thin crystals based on transition-metal dichalcogenides. The presence of strain breaks the…
Applying the novel exact-exchange (EXX) Kohn-Sham method within time-dependent density-functional theory, we obtained the optical absorption spectrum of bulk silicon in good agreement with experiments including excitonic features. Analysis…
We study the effect of Coulomb correlation on the emission properties of the ground state exciton in zincblende CdSe/ZnS core-shell and in wurtzite ZnO quantum dots. We validate our theory model by comparing results of computed exciton…
The spin-flip rate that couples dark and bright excitons in self-assembled quantum dots is obtained from time-resolved spontaneous emission measurements in a modified local density of optical states. Employing this technique, we can…
In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1\mu m < \lambda < 1.3 \mu m) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure…
We theoretically study the optical properties and the electronic structure of highly elongated quantum dots (quantum dashes) and show how carrier trapping due to geometrical fluctuations of the confining potential affects the excitonic…
We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly…
We derive a general relation between the fine structure splitting (FSS) and the exciton polarization angle of self-assembled quantum dots (QDs) under uniaxial stress. We show that the FSS lower bound under external stress can be predicted…
The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states…
We study an electron-hole pair in a stack of multiple quantum dots in the presence of an external electric field using the configuration interaction approach. We find that the bright energy levels can be grouped into families which are…
A multi-band effective-mass Hamiltonian is derived for lattice-matched semiconductor nanostructures in a slowly varying external magnetic field. The theory is derived from the first-principles magnetic-field coupling Hamiltonian of Pickard…
Anisotropic exchange-splitting in semiconductor quantum dots (QDs) results in bright-exciton fine-structure-splitting (FSS) important for quantum information processing. Direct measurement of FSS usually requires single/few QDs at…
We show here that the Hamiltonian for an electronic system may be written exactly in terms of fluctuation operators that transition constituent fragments between internally correlated states, accounting rigorously for inter-fragment…
First-principle path integral Monte Carlo simulations were performed in order to analyze correlation effects in complex electron-hole plasmas, particularly with regard to the appearance of excitonic bound states. Results are discussed in…
We theoretically studied the exciton geometric structure in layered semiconducting transition metal dichalcogenides. Based on a three-orbital tight-binding model for Bloch electrons which incorporates their geometric structures, an…
Interaction of excitons with resident charge carriers in semiconductors gives rise to bound three-particle complexes, trions, whose optical response is conveniently described in the framework of many-body correlated Fermi polaron states.…