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The fractional quantum Hall effect (FQHE) realized in two-dimensional electron systems is explained by the emergent composite fermions (CF) out of ordinary electrons. It is possible to write down explicit wavefunctions explaining many if…

介观与纳米尺度物理 · 物理学 2025-01-31 Thierry Jolicoeur

Fractional quantum Hall (FQH) effects in graphene are studied because of their relativistic characteristics and the valley degree of freedom. Recently FQH effects have been observed at various filling factors with graphene on a hexagonal…

强关联电子 · 物理学 2018-03-14 Kouki Yonaga , Naokazu Shibata

In this article we review the quantum Hall physics of graphene based two-dimensional electron systems, with a special focus on recent experimental and theoretical developments. We explain why graphene and bilayer graphene can be viewed…

介观与纳米尺度物理 · 物理学 2015-05-30 Yafis Barlas , Kun Yang , A. H. MacDonald

Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…

介观与纳米尺度物理 · 物理学 2014-12-09 S. Novikov , N. Lebedeva , K. Pierz , A. Satrapinski

Graphene is the first example of truly two-dimensional crystals - it's just one layer of carbon atoms. It turns out to be a gapless semiconductor with unique electronic properties resulting from the fact that charge carriers in graphene…

介观与纳米尺度物理 · 物理学 2011-11-09 M. I. Katsnelson , K. S. Novoselov

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…

The observation of the fractional quantum Hall (FQH) effect in 2D electron gases ushered in investigations of topological phases driven by strong electron correlations. Their remarkable features include fractionalized elementary…

Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hosted in high mobility 2DEG with large external magnetic field…

材料科学 · 物理学 2018-10-17 Gang Qiu , Yixiu Wang , Yifan Nie , Yongping Zheng , Kyeongjae Cho , Wenzhuo Wu , Peide D. Ye

We study the quantum Hall effect in a monolayer graphene by using an approach based on thermodynamical properties. This can be done by considering a system of Dirac particles in an electromagnetic field and taking into account of the edges…

介观与纳米尺度物理 · 物理学 2016-04-20 Ahmed Jellal

We study the quantum Hall effect (QHE) in graphene based on the current injection model. In our model, the presence of disorder, the edge-state picture, extended states and localized states, which are believed to be indispensable…

介观与纳米尺度物理 · 物理学 2010-02-26 Tobias Kramer , Christoph Kreisbeck , Viktor Krueckl , Eric J Heller , Robert E Parrott , Chi-Te Liang

Strong Goos-H\"anchen (GH) effect at a prism-graphene interface in the quantum Hall effect (QHE) condition is reported. Based on the full quantum description of the temperature-dependent surface conductivity of graphene present in the…

介观与纳米尺度物理 · 物理学 2023-03-22 D. Jahani , O. Akhavan , A. Alidoust Ghatar

We study the competition between the long-range Coulomb interaction, disorder scattering, and lattice effects in the integer quantum Hall effect (IQHE) in graphene. By direct transport calculations, both $\nu=1$ and $\nu=3$ IQHE states are…

介观与纳米尺度物理 · 物理学 2009-11-13 L. Sheng , D. N. Sheng , F. D. M. Haldane , Leon Balents

There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in…

介观与纳米尺度物理 · 物理学 2007-05-23 K. S. Novoselov , E. McCann , S. V. Morozov , V. I. Falko , M. I. Katsnelson , U. Zeitler , D. Jiang , F. Schedin , A. K. Geim

The recent discovery of fractional quantum Hall states in graphene raises the question of whether the physics of graphene and its bilayer offers any advantages over GaAs-based materials in exploring strongly-correlated states of…

介观与纳米尺度物理 · 物理学 2011-10-26 Z. Papic , R. Thomale , D. A. Abanin

Quantum Hall effect in 1,2-layer graphene is analyzed. The transverse and longitudinal resistivity are found to be universal functions of the filling factor and temperature. At fixed magnetic field mode the magneto-transport problem is…

介观与纳米尺度物理 · 物理学 2024-06-07 M. V. Cheremisin

Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic…

介观与纳米尺度物理 · 物理学 2015-05-14 Simon Branchaud , Alicia Kam , Piotr Zawadzki , Francois M. Peeters , Andrew S. Sachrajda

We apply Laughlin's gauge argument to analyze the $\nu=0$ quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the…

介观与纳米尺度物理 · 物理学 2009-08-09 S. Das Sarma , Kun Yang

The unusual quantum Hall effect (QHE) in graphene is often discussed in terms of Dirac fermions moving with a linear dispersion relation. The same phenomenon will be explained in terms of the more traditional composite bosons, which move…

超导电性 · 物理学 2016-01-18 Shigeji Fujita , Akira Suzuki

We investigate the fractional quantum anomalous Hall (FQAH) effect in rhombohedral multilayer graphene (RnG) in the presence of a strong applied displacement field. We first introduce the interacting model of RnG, which includes the…

强关联电子 · 物理学 2025-02-17 Ke Huang , Sankar Das Sarma , Xiao Li

We report on the unusual nature of nu=0 state in the integer quantum Hall effect (QHE) in graphene and show that electron transport in this regime is dominated by counter-propagating edge states. Such states, intrinsic to massless Dirac…

介观与纳米尺度物理 · 物理学 2007-05-23 Dmitry A. Abanin , Kostya S. Novoselov , Uli Zeitler , Patrick A. Lee , Andre K. Geim , Leonid S. Levitov