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Density functional calculations are used to explain the charge transfer doping mechanism by which species physisorptively bonded to graphene can increase its free hole or electron density, without giving rise to defects, and thus maintain a…

材料科学 · 物理学 2017-03-22 Haichang Lu , Yuzheng Guo , John Robertson

To understand the band bending caused by metal contacts, we study the potential and charge density induced in graphene in response to contact with a metal strip. We find that the screening is weak by comparison with a normal metal as a…

材料科学 · 物理学 2015-05-14 P. A. Khomyakov , A. A. Starikov , G. Brocks , P. J. Kelly

Density functional theory calculations have been carried out to investigate single-layer phosphorene functionalized with two kinds of organic molecules, i.e. an electrophilic molecule tetracyano-p-quinodimethane (TCNQ) as electron acceptor…

介观与纳米尺度物理 · 物理学 2014-09-26 Ruiqi Zhang , Bin Li , Jinlong Yang

High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by…

Magic angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating.…

介观与纳米尺度物理 · 物理学 2021-07-21 Nikhil Tilak , Xinyuan Lai , Shuang Wu , Zhenyuan Zhang , Mingyu Xu , Raquel de Almeida Ribeiro , Paul C Canfield , Eva Y. Andrei

The electronic properties of doped bilayer graphene in presence of bottom and top gates have been studied and characterized by means of Density Functional Theory calculations. Varying independently the bottom and top gates it is possible to…

材料科学 · 物理学 2015-05-13 Paola Gava , Michele Lazzeri , A. Marco Saitta , Francesco Mauri

The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been…

Measuring the transport of electrons through a graphene sheet necessarily involves contacting it with metal electrodes. We study the adsorption of graphene on metal substrates using first-principles calculations at the level of density…

材料科学 · 物理学 2015-05-13 P. A. Khomyakov , G. Giovannetti , P. C. Rusu , G. Brocks , J. van den Brink , P. J. Kelly

Layered electrides, as typified by Ca$_2$N, are a new class of quasi-two-dimensional materials with low work functions. Using first-principles calculations, we have shown that a graphene layer deposited on Ca$_2$N is doped to $n=5\times…

材料科学 · 物理学 2017-12-20 Takeshi Inoshita , Masaru Tsukada , Susumu Saito , Hideo Hosono

Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or…

材料科学 · 物理学 2014-06-11 Liangzhi Kou , Feiming Hu , Binghai Yan , Thomas Frauenheim , Changfeng Chen

We investigate from first-principles many-body theory the role of the donor conjugation length in doped organic semiconductors forming charge-transfer complexes (CTCs) exhibiting partial charge transfer. We consider oligothiophenes (nT)…

材料科学 · 物理学 2022-08-16 Ana M. Valencia , Caterina Cocchi

We show that bilayer graphene in the presence of a 2D superlattice potential provides a highly tunable setup that can realize a variety of flat band phenomena. We focus on two regimes: (i) topological flat bands with non-zero Chern numbers,…

介观与纳米尺度物理 · 物理学 2023-06-16 Sayed Ali Akbar Ghorashi , Aaron Dunbrack , Ahmed Abouelkomsan , Jiacheng Sun , Xu Du , Jennifer Cano

Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport…

介观与纳米尺度物理 · 物理学 2011-11-09 T. O. Wehling , K. S. Novoselov , S. V. Morozov , E. E. Vdovin , M. I. Katsnelson , A. K. Geim , A. I. Lichtenstein

Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H-SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic…

介观与纳米尺度物理 · 物理学 2012-02-23 N. Jakse , R. Arifin , S. K. Lai

Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct…

介观与纳米尺度物理 · 物理学 2017-06-05 Jiayu Li , Li Lin , Dingran Rui , Qiucheng Li , Jincan Zhang , Ning Kang , Yanfeng Zhang , Hailin Peng , Zhongfan Liu , H. Q. Xu

Two-dimensional carbon, or graphene, is a semi-metal that presents unusual low-energy electronic excitations described in terms of Dirac fermions. We analyze in a self-consistent way the effects of localized (impurities or vacancies) and…

强关联电子 · 物理学 2009-11-11 N. M. R. Peres , F. Guinea , A. H. Castro Neto

Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric…

Heavily doping graphene by intercalation can raise its Fermi level near an extended van Hove singularity, potentially inducing correlated electronic phases. Intercalation also modifies the band structure: dopants may hybridize with carbon…

We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral intensity anomalies (in addition to linewidths and peak…

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak…