相关论文: Bipolar resistive switching in amorphous titanium …
Epitaxial NbO2 (110) films, 20 nm thick, were grown by pulsed laser deposition on Al2O3 (0001) substrates. The Ar/O2 total pressure during growth was varied to demonstrate the gradual transformation between NbO2 and Nb2O5 phases, which was…
Herein, titania thin films are fabricated by a facile liquid-phase method based on vacuum filtration of a colloidal suspension of titania nanosheets, which is followed by thermal annealing to transform the nanosheet film into anatase TiO2.…
We discuss the environmental instability of amorphous indium oxide (InOx)-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InOx doped with low and high…
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…
Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium…
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics…
We present the results of an experimental study of superconducting, disordered, thin-films of amorphous Indium Oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a…
Further development of nuclear power plant technology relies heavily on materials durability under operating conditions. Estimating the materials performance in the operando tests is crucial. In this paper, the mechanical behavior of thin…
In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive nanofilaments within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial…
We investigate the insulating phase that forms in a titanium nitride film in a close vicinity of the disorder-driven superconductor-insulator transition. In zero magnetic field the temperature dependence of the resistance reveals a sequence…
We study the low-temperature behavior and the phase transition of a thin film by Monte Carlo simulation. The thin film has a simple cubic lattice structure where each site is occupied by a Potts parameter which indicates the molecular…
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive…
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500…
Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium…
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…
Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness ranging from 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate (STO) substrates by pulsed laser deposition, and their structure and morphology…
Thermal switches, which electrically turn heat flow on and off, have attracted attention as thermal management devices. Electrochemical reduction/oxidation switches the thermal conductivity (\k{appa}\) of active metal oxide films. The…
Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…
We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory…