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相关论文: Shear effects in lateral piezoresponse force micro…

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In purely c-axis oriented PbZr$_{0.2}$Ti$_{0.8}$O$_3$ ferroelectric thin films, a lateral piezoresponse force microscopy signal is observed at the position of 180{\deg}domain walls, where the out-of-plane oriented polarization is reversed.…

材料科学 · 物理学 2015-05-19 J. Guyonnet , H. Bea , P. Paruch

Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…

材料科学 · 物理学 2012-05-02 J. Guyonnet , I. Gaponenko , S. Gariglio , P. Paruch

Using the model system of ferroelectric domain walls, we explore the effects of long-range dipolar interactions and periodic ordering on the behavior of pinned elastic interfaces. In piezoresponse force microscopy studies of the…

无序系统与神经网络 · 物理学 2014-02-18 B. Ziegler , K. Martens , T. Giamarchi , P. Paruch

Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…

介观与纳米尺度物理 · 物理学 2017-02-23 Gabriele De Luca , Marta D. Rossell , Jakob Schaab , Nathalie Viart , Manfred Fiebig , Morgan Trassin

Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism,…

无序系统与神经网络 · 物理学 2013-11-07 T. Tybell , P. Paruch , T. Giamarchi , J. -M. Triscone

In piezoresponse force microscopy a lateral signal at the domain boundaries is occasionally observed. In recent years, a couple of experiments have been reported and varying explanations for the origin of this lateral signal have been…

材料科学 · 物理学 2016-08-14 Florian Johann , Tobias Jungk , Martin Lilienblum , Ákos Hoffmann , Elisabeth Soergel

There is growing evidence that domain walls in ferroics can possess emergent properties that are absent in bulk materials. For example, 180 domain walls in the ferroelectric-antiferromagnetic BiFeO3 are particularly interesting because they…

The depolarization fields set up to due to uncompensated surface charges in a ferroelectric thin film can suppress the ferroelectric phase below a critical size. Recent experiments show that 180 degree domain structures can help to…

材料科学 · 物理学 2007-05-23 Rajeev Ahluwalia , David J. Srolovitz

We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm…

The extrinsic size effect in Piezoresponse Force Microscopy of ferroelectric and piezoelectric thin films on non-polar dielectric substrate is analyzed. Analytical expressions for effective piezoresponse, object transfer function…

材料科学 · 物理学 2009-11-13 Anna N. Morozovska , Sergei V. Svechnikov , Eugene A. Eliseev , Sergei V. Kalinin

Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence…

The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of domain wall roughness reveal a power law growth of the correlation function of…

无序系统与神经网络 · 物理学 2013-11-07 P. Paruch , T. Giamarchi , J. -M. Triscone

The balance between interfacial chemistry, electrostatics, and epitaxial strain plays a crucial role in stabilizing polarization in ferroelectric thin films. Here, we bring these contributions into competition in BiFeO$_3$ (BFO) thin films…

Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using…

无序系统与神经网络 · 物理学 2022-01-05 Guillaume Rapin , Sophia Ehrensperger , Cédric Blaser , Nirvana Caballero , Patrycja Paruch

Ferroelectric domains were investigated using piezoresponse force microscopy in superlattices composed of multiferroic BiFeO3 and SrTiO3 layers. Compared to single BiFeO3 thin films, a reduction in the domains size and a suppression of the…

We investigate the nonlinear response of the domain wall velocity ($v$) to an external electric field ($E_{ext}$) in ferroelectric Si-doped HfO$_{2}$ thin film capacitors using piezoresponse force microscopy (PFM) and switching current…

强关联电子 · 物理学 2021-03-15 So Yeon Lim , Min Sun Park , Ahyoung Kim , Sang Mo Yang

We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3…

We report on the frequency and stress dependence of the direct piezoelectric d33 coefficient in BiFeO3 ceramics. The measurements reveal considerable piezoelectric nonlinearity, i.e., dependence of d33 on the amplitude of the dynamic…

材料科学 · 物理学 2015-06-11 Tadej Rojac , Andreja Bencan , Goran Drazic , Marija Kosec , Dragan Damjanovic

Heterostructures consisting of PbZr0.2Ti0.8O3 and PbZr0.4Ti0.6O3 films grown on a SrTiO3 (100) substrate with a SrRuO3 bottom electrode were prepared by pulsed laser deposition. Using the additional interface provided by the ferroelectric…

材料科学 · 物理学 2009-03-27 Ludwig Geske , I. B. Misirlioglu , Ionela Vrejoiu , Marin Alexe , Dietrich Hesse

Multiferroic BiFeO3 epitaxial films with thickness ranging from 40 nm to 960 nm were grown by pulsed laser deposition on SrTiO3 (001) substrates with SrRuO3 bottom electrodes. X-ray characterization shows that the structure evolves from…

材料科学 · 物理学 2009-11-13 Dae Ho Kim , Ho Nyung Lee , Michael D. Biegalski , Hans M. Christen
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