相关论文: Frequency converter based on nanoscale MgO magneti…
Nanoscale resonators that oscillate at high frequencies are useful in many measurement applications. We studied a high-quality mechanical resonator made from a suspended carbon nanotube driven into motion by applying a periodic radio…
Frequency conversion is a widely realized physical process in nonlinear systems of optics and electronics. As an emerging nonlinear platform, spintronic devices have the potential to achieve stronger frequency conversion. Here, we…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a…
Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel…
Spin waves can induce domain wall motion in ferromagnets. We derive the equations of motion for a transverse domain wall driven by spin waves. Our calculations show that the magnonic spin-transfer torque does not cause rotation-induced…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
The responses of the electrical current and the current-induced spin transfer torque (CISTT) to an ac bias in addition to a dc bias in a magnetic tunnel junction are investigated by means of the time-dependent nonquilibrium Green function…
In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field…
We investigate the FMR characteristics of a magnetic dimer composed of two chains of iron nanoparticles coupled by dipolar interactions. The latter are treated beyond the point-dipole approximation taking into account the finite size and…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
A spintronic method of ultra-fast broadband microwave spectrum analysis is proposed. It uses a rapidly tuned spin torque nano-oscillator (STNO), and does not require injection locking. This method treats an STNO generating a microwave…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
A resonant method based on a tunnel-diode oscillator (TDO) for precision measurements of relative impedance changes in materials, is described. The system consists of an effective self-resonant LC-tank circuit driven by a forward-biased…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
We report the rectifying effect of a constant-wave radio frequency (RF) current by a magnetic domain wall (DW) on a single-layered ferromagnetic wire. A direct-current (DC) voltage is generated by the spin torque diode effect, which is a…
Rapid random telegraph noise (RTN) in magnetic tunnel junctions (MTJs) is an important figure of merit for probabilistic computing applications. However, the interactions between the macrospin and spin waves with finite wave numbers reduce…
We study the charge and spin currents passing through a magnetic tunnel junction (MTJ) on the basis of a tight-binding model. The currents are evaluated perturbatively with respect to the tunnel Hamiltonian. The charge current has the form…
Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…