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Motivated by the recent experimental evidence of commensurate surface charge density waves (CDW) in Pb/Ge(111) and Sn/Ge(111) sqrt{3}-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have…

强关联电子 · 物理学 2009-10-31 Giuseppe Santoro , Sandro Scandolo , Erio Tosatti

Motivated by the recent experimental evidence of commensurate surface CDW in Pb/Ge(111) and Sn/Ge(111) $\sqrt{3}$-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have investigated the role of…

强关联电子 · 物理学 2009-10-31 G. Santoro , S. Sorella , F. Becca , S. Scandolo , E. Tosatti

We demonstrate theoretically that the electronic ground state of the potassium-covered Si(111)-B surface is a Mott insulator, explicitly contradicting band theory but in good agreement with recent experiments. We determine the physical…

材料科学 · 物理学 2009-10-31 C. Stephen Hellberg , Steven C. Erwin

The ground state of Sn/Si(111) and Sn/Ge(111) surface $\alpha$-phases is reexamined theoretically, based on $ab-initio$ calculations where correlations are approximately included through the orbital dependence of the Coulomb interaction (in…

强关联电子 · 物理学 2009-11-13 G. Profeta , E. Tosatti

The ordered adsorbate layer Sn/Si(111) $(\sqrt 3 \times \sqrt 3)$ with coverage of one third of a monolayer is considered as a realization of strong electronic correlation in surface physics. Our theoretical analysis shows that…

强关联电子 · 物理学 2019-09-25 Maedeh Zahedifar , Peter Kratzer

We present ab-initio electronic structure calculations for the Si-terminated SiC(0001)$\sqrt{3}\times\sqrt{3}$ surface. While local density approximation (LDA) calculations predict a metallic ground state with a half-filled narrow band,…

强关联电子 · 物理学 2009-10-31 V. I. Anisimov , A. E. Bedin , M. A. Korotin , G. Santoro , S. Scandolo , E. Tosatti

Adsorption of one-third monolayer of Sn on an atomically-clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott…

The one-third monolayer Sn layer on Si(111) has long been considered a benchmark system for exploring two-dimensional Mott physics, owing to its narrow bandwidth and sizable on-site Coulomb repulsion. Previous experiments suggested the…

We investigate ground state properties of the half-filled staggered-flux Hubbard model on a square lattice. Energy gaps to charge and spin excitations and magnetic as well as dimer orders are calculated as a function of interaction strength…

强关联电子 · 物理学 2015-06-04 Chia-Chen Chang , Richard T. Scalettar

Inspired by recent discovery of correlated insulating states in twisted bilayer graphene (TBG), we study a two-orbital Hubbard model on the honeycomb lattice with two electrons per unit cell. Based on the real-space density matrix…

强关联电子 · 物理学 2019-08-28 Zheng Zhu , D. N. Sheng , Liang Fu

Using density matrix renormalization group numerical calculations, we study the phase diagram of the half filled Bose-Hubbard system in the sawtooth lattice with strong frustration in the kinetic energy term. We focus in particular on…

量子气体 · 物理学 2017-05-03 Benoît Grémaud , G. George Batrouni

Semiconductor surfaces with narrow surface bands provide unique playgrounds to search for Mott-insulating state. Recently, a combined experimental and theoretical study [Phys. Rev. Lett. 114, 247602 (2015)] of the two-dimensional (2D) Sn…

材料科学 · 物理学 2016-01-18 Seho Yi , Hunpyo Lee , Jin-Ho Choi , Jun-Hyung Cho

We have performed the semilocal and hybrid density-functional theory (DFT) studies of the Sn/Ge(111) surface to identify the origin of the observed insulating ${\sqrt{3}}{\times}{\sqrt{3}}$ phase below ${\sim}$30 K. Contrasting with the…

介观与纳米尺度物理 · 物理学 2013-10-08 Jun-Ho Lee , Hyun-Jung Kim , Jun-Hyung Cho

Two-dimensional moir\'e materials have emerged as the most versatile platforms for realizing quantum phases of electrons. Here, we explore the stability origins of correlated states in WSe2/WS2 moir\'e superlattices. We find that ultrafast…

Motivated by the recent discovery of a low temperature spin liquid phase in layered organic compound $\kappa$-(ET)$_2$Cu$_2$(CN)$_3$ which becomes a superconductor under pressure, we examine the phase transition of Mott insulating and…

超导电性 · 物理学 2007-05-23 J. Y. Gan , Yan Chen , F. C. Zhang

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the recently discovered 3D topological insulator Bi1-xSbx [D. Hsieh et al., Nature 452, 970 (2008)]. By modulating the…

介观与纳米尺度物理 · 物理学 2010-01-12 D. Hsieh , L. A. Wray , D. Qian , Y. Xia , Y. S. Hor , R. J. Cava , M. Z. Hasan

The Sn/Si(111)-({\sqrt}3{\times}{\sqrt}3)R30{\deg} surface, a 2D Mott insulator, has long been predicted and then found experimetally to metallize and even turn superconducting upon boron doping. In order to clarify the structural,…

We demonstrate that at a filling of $n=1.5$, an hexatic insulating state obtains in the extended Hubbard model on a triangular lattice. Composed of two tetragonal sublattices with fillings of $n=1$ and $n=2$, the insulating state is charge…

强关联电子 · 物理学 2013-05-29 Ting-Pong Choy , Dimitrios Galanakis , Philip Phillips

As an exemplary Kondo insulator, SmB6 has been studied for several decades; however, direct evidence for the development of the Kondo coherent state and the evolution of the electronic structure in the material has not been obtained due to…

强关联电子 · 物理学 2013-02-15 Xiaohang Zhang , N. P. Butch , P. Syers , S. Ziemak , Richard L. Greene , J. Paglione

The organic charge-transfer salt EtMe$_3$P[Pd(dmit)$_2$]$_2$ is a quasi-two-dimensional Mott insulator with localized spins $S$ = 1/2 residing on a distorted triangular lattice. Here we report measurements of the uniaxial thermal expansion…

强关联电子 · 物理学 2014-01-14 Rudra Sekhar Manna , Mariano de Souza , Reizo Kato , Michael Lang
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