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相关论文: Double-gated graphene-based devices

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By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…

The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime…

介观与纳米尺度物理 · 物理学 2015-06-12 F. T. Vasko

We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire…

介观与纳米尺度物理 · 物理学 2016-04-20 Matthias Berl , Lars Tiemann , Werner Dietsche , Helmut Karl , Werner Wegscheider

We present a systematic Raman study of unconventionally-stacked double-layer graphene, and find that the spectrum strongly depends on the relative rotation angle between layers. Rotation-dependent trends in the position, width and intensity…

While preserving many of the unusual features of single-layer graphene, few-layer graphene (FLG) provides a richness and flexibility of electronic structure that render this set of materials of great interest for both fundamental studies…

介观与纳米尺度物理 · 物理学 2009-08-04 Kin Fai Mak , Matthew Y. Sfeir , James A. Misewich , Tony F. Heinz

The discovery of correlated phases in twisted moir\'e superlattices accelerated the search for low-dimensional materials with exotic properties. A promising approach uses engineered substrates to strain the material. However, designing…

介观与纳米尺度物理 · 物理学 2023-08-25 Md Tareq Mahmud , Dawei Zhai , Nancy Sandler

Graphene has attracted increasing interests due to its remarkable properties, however, the zero band gap of monolayer graphene might limit its further electronic and optoelectronic applications. Herein, we have successfully synthesized…

Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…

介观与纳米尺度物理 · 物理学 2017-01-30 Kuei-Lin Chiu , Yang Xu

The generation of highly-confined plasmons through far-field optical illumination appears to be impractical for technological applications due to their large energy-momentum mismatch with external light. Electrical generation of plasmons…

介观与纳米尺度物理 · 物理学 2019-04-03 Sandra de Vega , F. Javier García de Abajo

We study the electronic structure of Dirac fermions scattered by double barrier potential in graphene under strain effect. We show that traction and compression strains can be used to generate fermion beam collimation, 1D channels, surface…

介观与纳米尺度物理 · 物理学 2019-07-01 El Bouâzzaoui Choubabi , Abdellatif Kamal , Ahmed Jellal , Hocine Bahlouli

Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform…

We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which…

介观与纳米尺度物理 · 物理学 2010-06-09 Atindra Nath Pal , Arindam Ghosh

For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types…

光学 · 物理学 2015-06-18 Nathan Youngblood , Yoska Anugrah , Rui Ma , Steven J. Koester , Mo Li

We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn…

介观与纳米尺度物理 · 物理学 2018-02-21 R. S. Gonnelli , E. Piatti , A. Sola , M. Tortello , F. Dolcini , S. Galasso , J. R. Nair , C. Gerbaldi , E. Cappelluti , M. Bruna , A. C. Ferrari

Electronic and photonic devices based on the two-dimensional material graphene have unique properties, leading to outstanding performance figures-of-merit. Mastering the integration of this new and unconventional material into an…

介观与纳米尺度物理 · 物理学 2019-12-10 Daniel Neumaier , Stephan Pindl , Max C. Lemme

Fabrication of devices made by isolated Graphene or Graphene-like single layers (such as h-BN) has opened up possibility of examining highly correlated states of electron systems in parts of their phase diagram that is impossible to access…

强关联电子 · 物理学 2015-12-08 Bahman Roostaei

The discovery of unusual heat conduction properties of graphene has led to a surge of theoretical and experimental studies of phonon transport in two-dimensional material systems. The rapidly developing graphene thermal field spans from…

材料科学 · 物理学 2016-02-01 Denis L. Nika , Alexander A. Balandin

Thermodynamic properties of quasiparticles in a graphene-based structures are investigated. Two graphene superconducting layers (one superconducting component is placed on the top layeredgraphene structure and the other component in the…

介观与纳米尺度物理 · 物理学 2011-10-26 Dima Bolmatov

From a combination of careful and detailed theoretical and experimental studies, we demonstrate that the Boltzmann theory including all scattering mechanisms gives an excellent account, with no adjustable parameters, of high electric field…

介观与纳米尺度物理 · 物理学 2010-06-10 Ashley M. DaSilva , Ke Zou , J. K. Jain , J. Zhu

Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…

介观与纳米尺度物理 · 物理学 2018-04-24 K. L. Chiu