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相关论文: Local Interlayer Tunneling Between Two-Dimensional…

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We develop a theory for the anomalous interlayer conductance peaks observed in bilayer electron systems at nu=1. Our model shows the that the size of the peak at zero bias decreases rapidly with increasing in-plane magnetic field, but its…

介观与纳米尺度物理 · 物理学 2009-11-07 M. Abolfath , R. Khomeriki , K. Mullen

We consider various exchange-driven electronic instabilities in semiconductor double-layer systems in the absence of any external magnetic field. We establish that there is no exchange-driven bilayer to monolayer charge transfer instability…

凝聚态物理 · 物理学 2009-10-28 Lian Zheng , M. W. Ortalano , S. Das Sarma

At strong magnetic fields double-layer two-dimensional-electron-gas systems can form an unusual broken symmetry state with spontaneous inter-layer phase coherence. The system can be mapped to an equivalent system of pseudospin $1/2$…

凝聚态物理 · 物理学 2009-10-28 Kun Yang , K. Moon , Lotfi Belkhir , H. Mori , S. M. Girvin , A. H. MacDonald , L. Zheng , D. Yoshioka

Recent Scanning Tunneling Microscope (STM) experiments offer a unique insight into the inner workings of the superconducting state of high-Tc superconductors. Deliberately placed inside the material impurities perturb the coherent state and…

超导电性 · 物理学 2007-05-23 Ivar Martin , Alexander V. Balatsky

The tunneling into the {\em bulk} of a 2D electron system (2DES) in strong magnetic field is studied near the integer quantum Hall transitions. We present a nonperturbative calculation of the tunneling density of states (TDOS) for both…

介观与纳米尺度物理 · 物理学 2009-10-31 Ziqiang Wang , Shanhui Xiong

ElectroChemical Scanning Tunneling Microscopy (ECSTM) is gaining popularity as a tool to implement proof-of-concept single (bio)molecular transistors. The understanding of such systems requires a discussion of the mechanism of the…

材料科学 · 物理学 2009-11-11 S. Corni

We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the…

介观与纳米尺度物理 · 物理学 2015-10-28 Matthew Yankowitz , Devin McKenzie , Brian J. LeRoy

Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to high speed transistors. Electrical circuits are thereby…

介观与纳米尺度物理 · 物理学 2017-12-20 N. Bachsoliani , S. Platonov , A. D. Wieck , S. Ludwig

Scanning Tunneling Microscopy (STM) is a powerful technique that utilizes quantum tunneling to visualize atomic surfaces with high precision. This study presents detailed topographic maps and evaluates the local density of states (LDOS) for…

介观与纳米尺度物理 · 物理学 2024-02-19 Dhananjay Saikumar

Spin-polarized scanning tunneling microscopy (SP-STM) experiments on ultrathin films with non-collinear spin textures demonstrate that resonant tunneling allows for atomic-scale spin-sensitive imaging in real space at tip-sample distances…

应用物理 · 物理学 2020-03-30 Anika Schlenhoff , Stepan Kovarik , Stefan Krause , Roland Wiesendanger

Transition Voltage Spectroscopy (TVS) has been proposed as a tool to analyze charge transport through molecular junctions. We extend TVS to Au-vacuum-Au junctions and study the distance dependence of the transition voltage V_t(d) for clean…

介观与纳米尺度物理 · 物理学 2015-05-27 M. L. Trouwborst , C. A. Martin , R. H. M. Smit , C. M. Guedon , T. A. Baart , S. J. van der Molen , J. M. van Ruitenbeek

In the fields of nanoscience and nanotechnology, it is important to be able to functionalize surfaces chemically for a wide variety of applications. Scanning tunneling microscopes (STMs) are important instruments in this area used to…

Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for example, manipulating the twist angle of bilayer materials or…

材料科学 · 物理学 2021-05-14 Michael J Zachman , Jacob Madsen , Xiang Zhang , Pulickel M Ajayan , Toma Susi , Miaofang Chi

Two-dimensional altermagnets exhibit exceptional potential for low-power spintronics via nonrelativistic spin splitting and zero net magnetization. Here, we systematically investigate the influence of interlayer interactions on the…

材料科学 · 物理学 2026-03-25 Siqi Xu , Qilong Cui , Shaowen Xu , Xianbo Chenwei , Jiahao Zhang , Ruixue Li , Yuan Li , Gaofeng Xu , Fanhao Jia

A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers and influences…

凝聚态物理 · 物理学 2015-06-25 D. Yoshioka , A. H. MacDonald

The electrostatic behavior of a prototypical three-dimensional topological insulator Bi$_2$Se$_3$(111) is investigated by a scanning tunneling microscopy (STM) study of the distribution of Rb atoms adsorbed on the surface. The positively…

介观与纳米尺度物理 · 物理学 2015-06-18 P. Löptien , L. Zhou , J. Wiebe , A. A. Khajetoorians , J. L. Mi , B. B. Iversen , Ph. Hofmann , R. Wiesendanger

Many promising building blocks of future electronic technology - including non-stoichiometric compounds, strongly correlated oxides, and strained or patterned films - are inhomogeneous on the nanometer length scale. Exploiting the…

介观与纳米尺度物理 · 物理学 2013-11-08 Anjan Soumyanarayanan , Michael M. Yee , Yang He , Hsin Lin , Dillon R. Gardner , Arun Bansil , Young S. Lee , Jennifer E. Hoffman

In two-dimensional lattices the electronic levels are unevenly spaced, and the density of states (DOS) displays a logarithmic divergence known as the Van Hove singularity (VHS). This is the case in particular for the layered cuprate…

超导电性 · 物理学 2011-03-07 A. Piriou , N. Jenkins , C. Berthod , I. Maggio-Aprile , Ø. Fischer

The discovery of a two-dimensional electron gas (2DEG) at the interface between insulating oxides has led to a well-deserved level of excitement due to possible applications as "in-plane" all-oxide nanoelectronics. Here we expand the range…

材料科学 · 物理学 2009-09-16 J. D. Burton , J. P. Velev , E. Y. Tsymbal

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…