相关论文: Gate control of low-temperature spin dynamics in t…
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…
With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring,…
We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence…
We demonstrate coherent optical control of a single hole spin confined to an InAs/GaAs quantum dot. A superposition of hole spin states is created by fast (10-100 ps) dissociation of a spin-polarized electron-hole pair. Full control of the…
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the…
The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature,…
We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to…
Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2, nu=11/2, and nu=13/2 at low temperature. In stark contrast, the transport at nu=9/2 is isotropic for…
The mechanism underlying charge transport in strongly correlated quantum systems, such as doped antiferromagnetic Mott insulators, remains poorly understood. Here we study the expansion dynamics of an initially localized hole inside a…
Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with…
We investigate heavy-hole spin relaxation and decoherence in quantum dots in perpendicular magnetic fields. We show that at low temperatures the spin decoherence time is two times longer than the spin relaxation time. We find that the spin…
We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
Detailed experimental studies of the conductance of mesoscopic GaAs devices in the few-mode regime reveal a novel thermal effect: for temperatures up to at least 10 K the measured gate characteristics, i.e. conductance $G$ versus gate…
Based on a rigorous quantum-kinetic approach, spin-charge coupled drift-diffusion equations are derived for a strongly confined two-dimensional hole gas. An electric field leads to a coupling between the spin and charge degrees of freedom.…
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…
The spin dynamics in a broad range of systems can be studied using circularly polarized optical excitation with alternating helicity. The dependence of spin polarization on the frequency of helicity alternation, known as the spin inertia…
We revisit thermodynamics of five-dimensional AdS spacetime at finite temperature and rotation using the Euclidean path integral. It is generally believed that at low temperatures and finite rotation, the bulk saddle point that governs the…
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…
The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit…