相关论文: Photoluminescence properties of pyrolytic boron ni…
Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time- and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation…
We report on the UV laser induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation of the surface under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence…
Photoluminescence (PL) features of nanostructured h-BN powder are studied in the range of 200-600 nm in millisecond time window. It is found that four PL excitation bands of 4.58, 5.01, 5.29, and 5.77 eV are characteristic of the spectral…
In this manuscript we study luminescence of hexagonal boron nitride (hBN) by means of non-equilibrium Green's functions plus time-dependent perturbation theory. We derive a formula for light emission in solids in the limit of a weak…
Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN…
Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here…
Optically active defects in hexagonal boron nitride (hBN) have become amongst the most attractive single-photon emitters in the solid state, owing to their high-quality photophysical properties, combined with the unlimited possibilities of…
Atomically thin hexagonal boron nitride (h-BN), especially monolayer, has garnered increasing attention due to its intriguing optical and light-matter-interaction properties. However, its intrinsic optical properties and electronic band…
Photoluminescence (PL) from femtosecond laser modified regions inside cubic-boron nitride (c-BN) was measured under UV and visible light excitation. Bright PL at the red spectral range was observed, with a typical excited state lifetime of…
Hexagonal boron nitride (h-BN) is a 2D, wide band-gap semiconductor that has recently been shown to display bright room-temperature emission in the visible region, sparking immense interest in the material for use in quantum applications.…
Evaluation of the defect levels in low-dimensional materials is an important aspect of quantum science. In this article, we report a facile synthesis method of hexagonal boron nitride (h-BN) and evaluate the defects and their light emission…
We report on picosecond UV-laser processing of hexagonal boron nitride (hBN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are…
Optical imaging beyond the diffraction limit was one of the primary motivations for negative-index metamaterials, resulting in Pendry's perfect lens and the more attainable superlens. While these approaches offer sub-diffractional…
A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly…
Near band-gap luminescence (hnu > 5 eV) of hexagonal boron nitride has been studied by means of the time- and energy-resolved photoluminescence spectroscopy method. Two emissions have been observed at 5.5 eV and 5.3 eV. The high-energy…
The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining…
This paper shows a systematic experimental and theoretical study on the temperature dependence of the infrared optical properties of pyrolytic boron nitride (pBN), from 390 to 1050 $^{\circ}$CC for wavelengths between 4 and 16 {\mu}m. The…
Phonon polaritons (PhPs) are long-lived electromagnetic modes that originate from the coupling of infrared photons with the bound ionic lattice of a polar crystal. Cubic-Boron nitride (cBN) is such a polar, semiconductor material, which due…
Synthesis and research of the properties of boron nitride powders and BN powders with additives produced under effect of concentrated light in a flow of nitrogen in a xenon high-flux optical furnace are presented. A scanning and…
Radiative defects in hexagonal boron nitride (hBN) are active in a broad spectral range from deep ultraviolet to near-infrared wavelengths. Representatives of these defects act as bright single photon sources, spin-1 systems, and…