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Silicon Photomultipliers with cell-pitch ranging from 12 $\mu$m to 20 $\mu$m were tested against neutron irradiation at moderate fluences to study their performance for calorimetric applications. The photosensors were developed by FBK…

The current CMS silicon pixel detector as the innermost component of the CMS experiment is performing well at LHC design luminosity, but would be subject to severe inefficiencies at LHC peak luminosities of 2x10e34 cm^-2 s^-1. Therefore, an…

仪器与探测器 · 物理学 2015-05-15 Simon Spannagel

We have developed a silicon pixel detector to enhance the physics capabilities of the PHENIX experiment. This detector, consisting of two layers of sensors, will be installed around the beam pipe at the collision point and covers a…

The foreseen luminosity upgrade for the LHC (a factor of 5-10 more in peak luminosity by 2021) poses serious constraints on the technology for the ATLAS tracker in this High Luminosity era (HL-LHC). In fact, such luminosity increase leads…

仪器与探测器 · 物理学 2012-11-01 The ATLAS Planar Pixel Sensor R&D Project , : , M. Bomben

The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is…

仪器与探测器 · 物理学 2024-03-20 Simon Waid , Andreas Gsponer , Jürgen Maier , Philipp Gaggl , Richard Thalmeier , Thomas Bergauer

The ATLAS experiment will undergo around the year 2025 a replacement of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) with a new 5-layer pixel system. Thin planar pixel sensors are promising candidates to…

仪器与探测器 · 物理学 2017-02-01 Anna Macchiolo , Julien Beyer , Alessandro La Rosa , Richard Nisius , Natascha Savic

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm…

We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix…

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…

We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop…

高能物理 - 实验 · 物理学 2008-11-26 Maria R. Coluccia , J. A. Appel , G. Chiodini , D. C. Christian , S. Kwan

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon…

仪器与探测器 · 物理学 2007-05-23 E. Fretwurst , G. Lindstrom , I. Pintilie , J. Stahl

Vertex detectors at future hadron colliders will need to cope with large particle fluences. Diamond is a particularly radiation hard material and exhibits further properties that makes it an attractive material for such detectors. Within…

仪器与探测器 · 物理学 2019-08-14 Markus Cristinziani

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…

仪器与探测器 · 物理学 2015-01-21 T. Peltola

The proven radiation hardness of silicon 3D devices up to fluences of $1 {\times} 10^{17}$ $n_{eq}/cm^{2}$ makes them an excellent choice for next generation trackers, providing < 10 ${\mu}m$ position resolution at a high multiplicity…

仪器与探测器 · 物理学 2024-03-05 Evangelos-Leonidas Gkougkousis , Edgar Lemos Cid , Viktor Coco

The CMS silicon tracker consists of two tracking devices utilizing semiconductor technology: the inner pixel and the outer strip detectors. They operate in a high-occupancy and high-radiation environment presented by particle collisions in…

仪器与探测器 · 物理学 2019-08-13 Viktor Veszpremi

Particle IDentification (PID) is a central requirement of the experiments at the future EIC. Hadron PID at high momenta by RICH techniques requires the use of low density gaseous radiators, where the challenge is the limited length of the…

Pixel vertex detectors are THE instrument of choice for the tracking of charged particles close to the interaction point at the LHC. Hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the present state…

仪器与探测器 · 物理学 2009-09-29 Norbert Wermes

The capacitance of the charge collection node of a sensor system is an important parameter for the design of the analog front-end electronics. The analog front-end of high-granularity sensors like for example hybrid pixel detectors need to…

仪器与探测器 · 物理学 2021-03-24 H. Krüger , E. Kimmerle

A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…

仪器与探测器 · 物理学 2026-05-14 Jingxuan He , Congcong Wang , Yi Zhan , Zhenyu Jiang , Xiyuan Zhang , Xin Shi