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相关论文: Electron spin relaxation in bulk III-V semiconduct…

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Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…

材料科学 · 物理学 2009-11-07 Pil Hun Song , K. W. Kim

We develop a semiclassical kinetic theory for electron spin relaxation in semiconductors. Our approach accounts for elastic as well as inelastic scattering and treats Elliott-Yafet and motional-narrowing processes, such as D'yakonov-Perel'…

材料科学 · 物理学 2009-11-10 Franz X. Bronold , Avadh Saxena , Darryl L. Smith

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied via the fully microscopic kinetic spin Bloch equation approach where all the scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb,…

材料科学 · 物理学 2009-04-02 J. H. Jiang , Y. Zhou , T. Korn , C. Schüller , M. W. Wu

We study the electron spin relaxation in intrinsic and $p$-type (001) GaAs quantum wells by constructing and numerically solving the kinetic spin Bloch equations. All the relevant scatterings are explicitly included, especially the…

材料科学 · 物理学 2008-02-21 J. Zhou , M. W. Wu

We investigate electron spin relaxation in $p$-type GaAs quantum wells from a fully microscopic kinetic spin Bloch equation approach, with all the relevant scatterings, such as the electron-impurity, electron-phonon, electron-electron…

材料科学 · 物理学 2009-11-20 Y. Zhou , J. H. Jiang , M. W. Wu

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…

材料科学 · 物理学 2010-01-05 J. L. Cheng , M. W. Wu , J. Fabian

We present a microscopic analysis of electron spin dynamics in the presence of an external magnetic field for non-centrosymmetric semiconductors in which the D'yakonov-Perel' spin-orbit interaction is the dominant spin relaxation mechanism.…

凝聚态物理 · 物理学 2017-08-23 Vadim I. Puller , Lev G. Mourokh , Anatoly Yu. Smirnov , Norman J. M. Horing

We present an analytical study of the D'yakonov-Perel' spin relaxation time for degenerate electrons in a photo-excited electron-hole liquid in intrinsic semiconductors exhibiting a spin-split band structure. The D'yakonov-Perel' spin…

材料科学 · 物理学 2011-11-17 Matthew D. Mower , G. Vignale , I. V. Tokatly

Semiconductor Bloch equations, in their extension including the spin degree of freedom of the carriers, are capable to describe spin dynamics on a microscopic level. In the presence of free holes, electron spins can flip simultaneously with…

其他凝聚态物理 · 物理学 2009-11-11 C. Lechner , U. Roessler

A fully microscopic theory of electron spin relaxation by the D'yakonov-Perel' type spin-orbit coupling is developed for a semiconductor quantum well with a magnetic field applied in the growth direction of the well. We derive the Bloch…

凝聚态物理 · 物理学 2009-11-07 Vadim I. Puller , Lev G. Mourokh , Norman J. M. Horing , Anatoly Yu. Smirnov

A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…

材料科学 · 物理学 2009-11-11 Y. G. Semenov , K. W. Kim , G. J. Iafrate

We suggest an approach to the problem of free electron spin evolution in a semiconductor with arbitrary anisotropy or quantum structure in a magnetic field. The developed approach utilizes quantum kinetic equations for average spin…

材料科学 · 物理学 2007-05-23 Yu. G. Semenov

We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence…

介观与纳米尺度物理 · 物理学 2010-09-14 K. Shen , M. W. Wu

We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…

材料科学 · 物理学 2016-10-19 Gionni Marchetti , Matthew Hodgson , James McHugh , Roy Chantrell , Irene D'Amico

We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the…

介观与纳米尺度物理 · 物理学 2012-09-19 Oscar D. Restrepo , Wolfgang Windl

Despite the recent interest in "organic spintronics", the dominant spin relaxation mechanism of electrons or holes in an organic compound semiconductor has not been conclusively identified. There have been sporadic suggestions that it might…

介观与纳米尺度物理 · 物理学 2015-05-18 Supriyo Bandyopadhyay

We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al$_{0.4}$Ga$_{0.6}$As barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and…

材料科学 · 物理学 2007-05-23 J. Zhou , J. L. Cheng , M. W. Wu

The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$ with Bi composition $0\le x \le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease…

材料科学 · 物理学 2012-09-19 H. Tong , X. Marie , M. W. Wu

We calculate the spin relaxation time of conduction electrons in n-doped bulk gallium arsenide. We consider the Elliot-Yafet spin-relaxation mechanism, driven by Coulombic-impurity and electron-electron scattering. We find that these two…

凝聚态物理 · 物理学 2009-11-10 P. I. Tamborenea , M. A. Kuroda , F. L. Bottesi

We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the…

介观与纳米尺度物理 · 物理学 2015-05-19 Akashdeep Kamra , Bahniman Ghosh
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