相关论文: Anisotropic magnetoresistance in ferromagnetic ato…
Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In…
Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that…
We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on…
We report measurements of the electron transport through atomic-scale constrictions and tunnel junctions between ferromagnetic electrodes. Structures are fabricated using a combination of e-beam lithography and controlled electromigration.…
We study here, both experimentally and theoretically, the anisotropy of magnetoresistance in atomic contacts. Our measurements on iron break junctions reveal an abrupt and hysteretic switch between two conductance levels when a large…
Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one…
We develop a theory of the anisotropic magnetoresistance (AMR) effects of arbitrary directions of current and magnetization for ferromagnets. Here, we use the electron scattering theory with the $s$--$s$ and $s$--$d$ scattering processes,…
We derive the general expression of the anisotropic magnetoresistance (AMR) ratio of ferromagnets for a relative angle between the magnetization direction and the current direction. We here use the two-current model for a system consisting…
The anisotropic magnetoresistance (AMR) in thin permalloy strips was calculated at each steps during magnetization by the finite element method. The magnetization at equilibrium under different external fields was obtained by micromagnetic…
Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model…
Experimental measurements show that the angular dependence of the anisotropic magnetoresistance (AMR) in L1$_0$ ordered FePt epitaxial films on the current orientation and magnetization direction is a superposition of the corresponding…
We theoretically study the twofold and fourfold symmetric anisotropic magnetoresistance (AMR) effects of ferromagnets. We here use the two-current model for a system consisting of a conduction state and localized d states. The localized d…
Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…
Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of…
We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and…
Anisotropic magnetoresistance (AMR) has a crucial feature for developing highly sensitive sensors and innovative memory devices. While extensively studied in bulk materials, AMR effects in these materials are typically weak. Recent…
Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance (AMR) occurring in the ferromagnetic layer. It is shown, on the basis of a generalized two channel model, that…
Angular-dependent in-plane magnetoresistance (AMR) for single crystal $Na_{0.34}(H_3O)_{0.15}CoO_2$ with charge ordering is studied systematically. The anisotropic magnetoresistance shows a twofold symmetry at high temperature with rotating…