相关论文: Non-thermal photocoercivity effect in a ferromagne…
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored…
The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be…
Photo-induced charge transport in plasmonic metal nanostructures has garnered significant interest for applications in sensing and power conversion, yet the underlying mechanisms remain debated. Here, we report spatially correlated…
In this work, a hybrid integration of few-layer transition metal dichalcogenides (TMDCs) and ferroelectric polymer is designed to achieve passive control of optical properties in-situ. The electrical polarization in ferroelectric…
In centrosymmetric Dirac semimetals, second order nonlinear photocurrents are forbidden by the coexistence of time-reversal and inversion symmetries. Here, we demonstrate that finite photon momentum transfer acts as a dynamic symmetry…
The photogalvanic effect (PGE), a fundamental nonlinear optical phenomenon in non-centrosymmetric materials, generates direct photocurrent under polarized light. Using quantum kinetic theory within the relaxation-time approximation, we…
Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging…
We have studied the temperature dependence of the photoemission spectra of Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO) with $x=0.25$, 0.3 and 0.5. For $x=0.3$ and 0.5, we observed a gap in the low-temperature CE-type charge-ordered (CO) phase and a…
We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low…
The competition between shape and perpendicular magnetic anisotropies (PMA) in magnetic thin films gives rise to unusual magnetic behaviors. In ferromagnetic films with moderate PMA the magnetic domain configuration transitions from planar…
Light-matter interactions that lead to nonthermal changes in size of the sample constitute a photostrictive effect in many compounds. The photostriction phenomenon was observed in four main groups of materials, ferroelectrics, polar, and…
We present a study of photo-excited magnetization dynamics in ferromagnetic (Ga,Mn)As films observed by time-resolved magneto-optical measurements. The magnetization precession triggered by linearly polarized optical pulses in the absence…
The photovoltaic effect is one of the fundamental light-matter interactions in light energy harvesting. In conventional photovoltaic solar cells, the photogenerated charge carriers are extracted by the built-in electric field of a PN…
Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical interpretation of experimental data. The…
We report device level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory (MRAM) cells. It is shown that thermal agitation enhances the apparent damping for cells smaller…
Magnetic semiconductors have attracted interest because of the question of how a magnetic metal can be derived from a paramagnetic insulator. Here our approach is to carrier dope insulating FeSi and we show that the magnetic half-metal…
We investigate the optoelectronic response of a graphene interface junction, formed with bilayer and single-layer graphene, by photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by…
Spin dynamics in ferromagnetic $p$-(Ga,Mn)As ($x$ = 0.011, $T_{C}$ = 30 K) has been studied by carefully comparing the decay time of the photo-induced reflectivity change with the transient behavior of polar Kerr rotation induced by…
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs…
Pinning magnetization in a ferromagnetic thin film is commonly realized through exchange biasing with an adjacent antiferromagnet. Field-cooling from above the N\'{e}el temperature is a reliable yet slow re-pinning method in exchange-biased…