相关论文: Interfacial charge transfer in nanoscale polymer t…
A scheme for computing charge-transfer matrix elements with the linear combination of fragment molecular orbitals and the 'nonempirically tuned range-separated' density functional is presented. It takes account of the self-consistent…
Heterointerfaces of SrTiO$_{3}$ with other transition metal oxides make up an intriguing family of systems with a bounty of coexisting and competing physical orders. Some examples, such as LaAlO$_{3}$/SrTiO$_{3}$, support a high carrier…
We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport properties between the two charge layers. From electronic…
We performed dielectric spectroscopy on polypyrrole near the metal-insulator transition (MIT) down to 2 K. We evaluate the dependence of the plasma frequency and the scattering time (t) on the distance to the MIT, characterized by the…
Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge…
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…
Interface interactions in 2D vertically stacked heterostructures play an important role in optoe-lectronic applications, photodetectors based on graphene/InSe heterostructures had shown promising performance nowadays. However, nonlinear…
It is still a matter of controversy whether the relative difference in hole and electron transport in solution-processed organic semiconductors is either due to intrinsic properties linked to chemical and solid-state structure or to…
A novel mesoscopic electron spectrometer allows for the probing of relaxation processes in quantum Hall edge channels. The device is composed of an emitter quantum dot that injects energy-resolved electrons into the channel closest to the…
The contact resistance between two dissimilar semiconductors is determined by the carrier transmission through their interface. Despite the ubiquitous presence of interfaces, quantitative simulation of charge transport across such…
Kelvin probe force microscopy (KPFM) is a powerful tool for studying contact electrification, using an tiny tip to image voltages caused by transferred charge. It has been used in stationary studies focused on finding patterns (e.g.…
We have studied the zero-temperature statistics of charge transfer between the two edges of Quantum Hall liquids with filling factors $\nu_{0,1}=1/(2 m_{0,1}+1)$ forming Mach-Zehnder interferometer. The known Bethe ansatz solution for…
The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the…
We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate…
Transport measurements on thin films of NdNiO$_3$ reveal a crossover to a regime of pronounced nonlinear conduction below the well-known metal-insulator transition temperature. The evolution of the transport properties at temperatures well…
The low temperature transport of electron, or vibrational or electronic exciton towards polymer chains turns out to be dramatically sensitive to its interaction with transverse acoustic vibrations. We show that this interaction leads to…
A novel chiral interferometer is proposed that allows for a direct measurement of the phase of the transmission coefficient for transport through a variety of mesoscopic structures in a strong magnetic field. The effects of…
We present a stochastic approach for charge transport in transistors. In this approach, the electron and hole densities are governed by diffusion-reaction stochastic differential equations satisfying local detailed balance and the electric…
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…