相关论文: Canted Magnetization Texture in Ferromagnetic Tunn…
We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking…
The interaction between the electronic and structural degrees of freedom is central to several intriguing phenomena observed in condensed-matter physics. In magnetic materials, magnetic interactions couple to lattice degrees of freedom,…
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…
The antiferromagnetic domain structure of a multiferroic has been investigated in the presence of a ferroelectric domain structure. It has been demonstrated that an inhomogeneous magnetoelectric (flexomagnetoelectric) interaction leads to…
Giant or tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices. The effects rely on a conserved spin current passing between a reference and a sensing ferromagnetic electrode in a…
It is shown that in antiferromagnetic open or closed corrals of magnetic adatoms grown on surfaces, the attachment of a single extra adatom anywhere in the corral impacts on the geometrical topology of the nanosystem and generates complex…
Composite multiferroics, heterostructures of ferromagnetic (FM) and ferroelectric (FE) materials, are characterized by a remarkable magnetoelectric effect at the interface. Previous work has supported the ferromagnetic structure with…
We calculate the quantum tunneling rate of a ferromagnetic particle of $\sim 100 \AA$ diameter in a magnetic field of arbitrary angle. We consider the magnetocrystalline anisotropy with the biaxial symmetry and that with the tetragonal…
Magnetic textures in the ferromagnetic phases of La$_{1-x}$Sr$_x$MnO$_3$ for 0.15 $< x <$ 0.30 have been investigated by Lorentz microscopy combined with small-angle electron diffraction experiments. Various types of magnetic textures…
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar…
Thermal-magnetic noise at ferromagnetic resonance (T-FMR) can be used to measure magnetic perpendicular anisotropy of nanoscale magnetic tunnel junctions (MTJs). For this purpose, T-FMR measurements were conducted with an external magnetic…
We study influence of image forces on conductance of ferroelectric tunnel junctions. We show that the influence of image forces is twofold: i) they enhance the electro-resistance effect due to polarization hysteresis in symmetric tunnel…
Magnetic excitations in ferromagnetic systems with a noncollinear ground state magnetization experience a fictitious magnetic field due to the equilibrium magnetic texture. Here, we investigate how such fictitious fields lead to thermal…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…
We calculate the tunneling magnetoresistance (TMR) of Fe$\mid$ZnSe$\mid$Fe$\mid$ZnSe$\mid$Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of…
Based on spin-density functional theory we calculate the electronic structure of a tunnel junction consisting of two magnetic Fe layers separated by an insulating vacuum barrier selfconsistently. For the conductance the Landauer formula is…
Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in…
We analyze magnetic textures in a thin magnetic film and screening currents induced by these textures in a superconducting film. The films are supposed to be parallel and close to each other, but interact only via magnetic fields. We…
We make a theoretical study of the quantum oscillations of the tunneling magnetoresistance (TMR) as a function of the spacer layer thickness. Such oscillations were recently observed in tunneling junctions with a nonmagnetic metallic spacer…