相关论文: Ground-state properties of gapped graphene using t…
Edge excitations of the $\nu=0$ quantum Hall state in monolayer graphene are studied within the mean-field theory with different symmetry-breaking terms. The analytical expressions for the continuum (Dirac) model wave functions are obtained…
Using the self-consistent Hartree-Fock approximation, we study the compressibility instability of the interacting electrons in bilayer graphene. The chemical potential and the compressibility of the electrons can be significantly altered by…
Graphene in the presence of a strong external magnetic field is a unique attraction for investigations of the fractional quantum Hall (fQH) states with odd and even denominators of the fraction. Most of the attempts to understand Graphene…
The experimental availability of ultra-high-mobility samples of graphene opens the possibility to realize and study experimentally the "hydrodynamic" regime of the electron liquid. In this regime the rate of electron-electron collisions is…
Graphene is an ideal platform to study many-body effects due to its semimetallic character and the possibility to dope it over a wide range. Here we study the width of graphene's occupied $\pi$-band as a function of doping using…
We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion…
Reflectance and transmittance of graphene in the optical region are analyzed as a function of frequency, temperature, and carrier density. We show that the optical graphene properties are determined by the direct interband electron…
A number of interesting properties of graphene and graphite are postulated to derive from the peculiar bandstructure of graphene. This bandstructure consists of conical electron and hole pockets that meet at a single point in momentum (k)…
Graphene on a substrate has been shown to exhibit a transition, depending on the substrate material, from a zero-gap semiconductor state to a semimetallic state. The ground-state energy of the electron (hole) gas has been calculated within…
We characterize the carrier density profile of the ground state of graphene in the presence of particle-particle interaction and random charged impurity for zero gate voltage. We provide detailed analysis on the resulting spatially…
We develop a theory for the compressibility and quantum capacitance of disordered monolayer and bilayer graphene including the full hyperbolic band structure and band gap in the latter case. We include the effects of disorder in our theory,…
We study the transport properties of Dirac fermions through gapped graphene through a magnetic barrier irradiated by a laser field oscillating in time. We use Floquet theory and the solution of Weber's differential equation to determine the…
The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and…
We review field theoretical studies dedicated to understanding the effects of electron-electron interaction in graphene, which is characterized by gapless bands, strong electron-electron interactions, and emerging Lorentz invariance deep in…
The effect of weak potential and bond disorder on the density of states of graphene is studied. By comparing the self-consistent non-crossing approximation on the honeycomb lattice with perturbation theory on the Dirac fermions, we…
We review the transmission of Dirac electrons through a potential barrier in the presence of circularly polarized light. A different type of transmission is demonstrated and explained. Perfect transmission for nearly head-on collision in…
We calculate the effect of the electron-phonon interaction on the electronic density of states (DOS), the quasiparticle properties and on the optical conductivity of graphene. In metals with DOS constant on the scale of phonon energies, the…
In the recent years many researches were performed about graphene. Graphene is always considered a half metal or a zero gap semiconductor. In the last year new experiments were done about graphene on boron nitride and they obtained an…
We have carried out ab initio electronic structure calculations on graphane (hydrogenated graphene) with single and double vacancy defects. Our analysis of the density of states reveal that such vacancies induce the mid gap states and…
We investigate the superconducting proximity effect through graphene in the long diffusive junction limit, at low and high magnetic field. The interface quality and sample phase coherence lead to a zero resistance state at low temperature,…