相关论文: Temperature dependence of ambipolar diffusion in s…
The picosecond dynamics of excitons in colloidal CdSe nanorods are directly measured via their 1s to 2p-like internal transitions by ultra-broadband terahertz spectroscopy. Broadened absorption peaks from both the longitudinal and…
Interlayer exciton diffusion is studied in atomically-reconstructed MoSe2/WSe2 heterobilayers with suppressed disorder. Local atomic registry is confirmed by characteristic optical absorption, circularly-polarized photoluminescence, and…
Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and…
The absorption length, $\lambda_{abs}$, of light with wavelengths between 0.95 and 1.30$~\mu$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been…
The temperature dependent (30 K to 300 K) Doppler broadening of the positron annihilated g-radiation (DBPAR) measurement has been carried out on single crystalline Bi-2212 high Tc superconducting sample along two different crystallographic…
A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are generated…
When a pump beam is propagating through a silicon nanophotonic waveguide, a very small fraction of the light is scattered to other frequencies. At very low intensity, the amount of scattered light is proportional to the power of the pump…
We investigate the non-linear response and energy absorption in bulk silicon irradiated by intense 12-fs near-infrared laser pulses. Depending on the laser intensity, we distinguish two regimes of non-linear absorption of the laser energy:…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
The nature of the out-of-plane dissipation was investigated in underdoped $Y_{0.54}Pr_{0.46}Ba_{2}Cu_{3}O_{7-\delta}$ single crystals at temperatures close to the critical temperature. For this goal, temperature and angle dependent…
We report a thermo-optical bistability observed in silicon micro-cantilevers irradiated by a laser beam with mW powers: reflectivity, transmissivity, absorption, and temperature can change by a factor of two between two stable states for…
The extent of hydrogen coverage of the Si(001)c(4x2) surface in the presence of hydrogen gas has been studied with dispersion corrected density functional theory. Electronic energy contributions are well described using a hybrid functional.…
We present measurements of the dissipation and frequency shift in nanomechanical gold resonators at temperatures down to 10 mK. The resonators were fabricated as doubly-clamped beams above a GaAs substrate and actuated magnetomotively.…
The coefficient of diffusion of hydrogen in crystalline silicon is calculated using tight-binding molecular dynamics. Our results are in good quantitative agreement with an earlier study by Panzarini and Colombo [Phys. Rev. Lett. 73, 1636…
We report an experimental study on the temperature and number evolution of cold cesium atoms diffusively cooled inside a wall-coated glass cell by measuring the absorption profile of the 62S1/2 (F=4)-62P3/2 (F'=5) transition line with a…
Electron and phonon transient temperatures are analyzed in the case of nondegenerate semiconductors. An analytical solution is obtained for rectangular laser pulse absorption. It is shown that thermal diffusion is the main energy relaxation…
The power spectrum of temperature anisotropies induced by hot intracluster gas on the cosmic background radiation is calculated. For low multipoles it remains constant while at multipoles above $l>2000$ it is exponentially damped. The shape…
Spin defects in silicon carbide (SiC) have attracted increasing interest due to their excellent optical and spin properties, which are useful in quantum information processing. In this paper, we systematically investigate the temperature…
The thermal characteristics of silicon between 15 and 300 deg K are investigated by applying a computer program on the solution of the differential heat diffusion equation. The computer model is linked to high-purity silicon through a set…
Analysis of high spectral resolution observations of the $\lambda$6614 diffuse interstellar band (DIB) line profile show systematic variations in the positions of the peaks in the substructure of the profile. These variations -- shown here…