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Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and…

量子物理 · 物理学 2020-09-10 Andrea Morello , Jarryd J. Pla , Patrice Bertet , David N. Jamieson

We demonstrate that first-principles based adiabatic continuation approach is a very powerful and efficient tool for constructing topological phase diagrams and locating non-trivial topological insulator materials. Using this technique, we…

材料科学 · 物理学 2013-10-31 Hsin Lin , Tanmoy Das , Yung Jui Wang , L. A. Wray , S. -Y. Xu , M. Z. Hasan , A. Bansil

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots.…

We demonstrate a SWAP gate between laser-cooled ions in a segmented microtrap via fast physical swapping of the ion positions. This operation is used in conjunction with qubit initialization, manipulation and readout, and with other types…

Non-adiabatic two-qubit gate proposals for trapped-ion systems offer superior performance and flexibility over adiabatic schemes at the cost of increased laser control requirements. Existing fast gate schemes are limited by single-qubit…

We describe a many-body quantum system which can be made to quantum compute by the adiabatic application of a large applied field to the system. Prior to the application of the field quantum information is localized on one boundary of the…

量子物理 · 物理学 2013-06-19 Dave Bacon , Steven T. Flammia , Gregory M. Crosswhite

We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect…

量子物理 · 物理学 2015-05-19 Enrico Prati , Matteo Belli , Simone Cocco , Guido Petretto , Marco Fanciulli

We propose a quantum computer architecture involving substitutional donors in photonic-crystal silicon cavities and the optical initialization, manipulation, and detection processes already demonstrated in ion traps and other atomic…

介观与纳米尺度物理 · 物理学 2008-11-25 M. Abanto , L. Davidovich , Belita Koiller , R. L. de Matos Filho

A reliable route to the deterministic fabrication of impurity ion donors in silicon is required to advance quantum computing architectures based upon such systems. This paper reports the ability to dope isotopically-defined unique…

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…

The possibility of non-adiabatic electron pumping in the system of three coupled quantum dots attached to the leads is discussed. We have found out that periodical changing of energy level position in the middle quantum dot results in non…

介观与纳米尺度物理 · 物理学 2012-06-25 P. I. Arseyev , N. S. Maslova , V. N. Mantsevich

We propose two schemes to coherently transfer arbitrary quantum states of the two-electron singlet-triplet qubit across a chain of 3 quantum dots. The schemes are based on electrical control over the detuning energy of the quantum dots. The…

量子物理 · 物理学 2018-08-21 MengKe Feng , Chang Jian Kwong , Teck Seng Koh , Leong Chuan Kwek

The fabrication of single atom transistors paved the way for electronics based on single dopants. Recently the spectrum of a single dopant was measured electrically by coupling two such devices. The next step towards promising…

介观与纳米尺度物理 · 物理学 2015-06-12 B. Roche , R. -P. Riwar , B. Voisin , E. Dupont-Ferrier , R. Wacquez , M. Vinet , M. Sanquer , J. Splettstoesser , X. Jehl

We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…

介观与纳米尺度物理 · 物理学 2015-06-04 G. Mazzeo , E. Prati , M. Belli , G. Leti , S. Cocco , M. Fanciulli , F. Guagliardo , G. Ferrari

We report adiabatic passage experiments with a single trapped $^{40}$Ca$^+$ ion. By applying a frequency chirped laser pulse with a Gaussian amplitude envelope we reach a transfer efficiency of 0.990(10) on an optical transition from the…

A STIRAP-like scheme is proposed to exploit a three-photon resonance taking place in alkaline-earth-metal ions. This scheme is designed for state transfer between the two fine structure components of the metastable D-state which are two…

We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…

介观与纳米尺度物理 · 物理学 2009-11-11 V. C. Chan , T. M. Buehler , A. J. Ferguson , D. R. McCamey , D. J. Reilly , A. S. Dzurak , R. G. Clark , C. Yang , D. N. Jamieson

In the pursuit of scalable superconducting quantum computing, tunable couplers have emerged as a pivotal component, offering the flexibility required for complex quantum operations of high performance. In most current architectures of…

量子物理 · 物理学 2025-12-03 Xuan Zhang , Xu Zhang , Changling Chen , Kai Tang , Kangyuan Yi , Kai Luo , Zheshu Xie , Yuanzhen Chen , Tongxing Yan

Single electron transistor (SET) is an advanced tool to exploit in quantum devices. Working of such devices at room-temperature is essential for practical utilization. Dopant based single-electron devices are well studied at low-temperature…

介观与纳米尺度物理 · 物理学 2023-03-08 Pooja Yadav , Hemant Arora , Arup Samanta

Direct-to-Satellite IoT (DtS-IoT) has the potential to support multiple verticals, including agriculture, industry, smart cities, and environmental disaster prevention. This work introduces two novel DtS-IoT schemes using power domain…