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Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction…

介观与纳米尺度物理 · 物理学 2023-05-03 S. C. de la Barrera , Qin Gao , R. M. Feenstra

We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm$^2$ to a few $\mu$m$^2$ and thickness from $\sim 10 $nm to several tens of micrometers. The measured resistance can be…

材料科学 · 物理学 2015-05-28 N. García , P. Esquinazi , J. Barzola-Quiquia , S. Dusari

We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a distance of 30 nm, the tilting angle being of 45o with respect…

介观与纳米尺度物理 · 物理学 2016-07-27 Mircea Dragoman , Adrian Dinescu , Daniela Dragoman

We investigate the electronic and transport properties of gated bilayer graphene with one corrugated layer, which results in a stacking AB/BA boundary. When a gate voltage is applied to one layer, topologically protected gap states appear…

材料科学 · 物理学 2015-09-30 M. Pelc , W. Jaskólski , A. Ayuela , L. Chico

Quantum spin Hall insulator/metal interfaces are formed in graphene ribbons with intrinsic spin-orbit coupling by selectively doping two regions creating a potential step. For a clean graphene ribbon, the transmission of the topological…

介观与纳米尺度物理 · 物理学 2015-03-17 Elsa Prada , Georgo Metalidis

Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along…

介观与纳米尺度物理 · 物理学 2009-12-20 Tony Low , Joerg Appenzeller

We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism,…

介观与纳米尺度物理 · 物理学 2013-05-29 M. V. Medvedyeva , Ya. M. Blanter

Locally-gated single-layer graphene sheets have unusual discrete energy states inside the potential barrier induced by a finite-width gate. These states are localized outside the Dirac cone of continuum states and are responsible for novel…

介观与纳米尺度物理 · 物理学 2009-03-03 V. A. Yampol'skii , S. S. Apostolov , Z. A. Maizelis , Alex Levchenko , Franco Nori

To understand the band bending caused by metal contacts, we study the potential and charge density induced in graphene in response to contact with a metal strip. We find that the screening is weak by comparison with a normal metal as a…

材料科学 · 物理学 2015-05-14 P. A. Khomyakov , A. A. Starikov , G. Brocks , P. J. Kelly

By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our…

介观与纳米尺度物理 · 物理学 2012-03-05 Dong-Keun Ki , Seung-Geol Nam , Hu-Jong Lee , Barbaros Oezyilmaz

The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of…

Manipulating electron quantum 1D channels is an important element in the field of quantum information due to their ballistic and phase coherence properties. In GaAs and graphene based two dimensional gas systems, these edge channels have…

介观与纳米尺度物理 · 物理学 2025-11-04 Won Beom Choi , Myungjin Jeon , K. Watanabe , T. Taniguchi , Joonho Jang

A model for the rival mechanisms of hysteresis in graphene channel resistivity on a substrate of different nature dependence on a gate voltage - a direct one (caused by adsorbates with dipole moment on surface and interface) and an inverse…

介观与纳米尺度物理 · 物理学 2013-06-04 A. I. Kurchak , A. N. Morozovska , M. V. Strikha

At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall…

A massive quantum particle on a two-dimensional curved surface experiences a surface-geometry induced attractive potential that is characterized by the radii of curvature at a given point. With bilayer graphene sheets and carbon…

其他凝聚态物理 · 物理学 2009-10-07 Yogesh N. Joglekar , Avadh Saxena

By means of an envelope function analysis, we perform a numerical investigation of the conductance behavior of a graphene structure consisting of two regions (dots) connected to the entrance and exit leads through constrictions and…

介观与纳米尺度物理 · 物理学 2013-12-24 Paolo Marconcini , Massimo Macucci

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

We evaluate the electronic transmission and conductance in bilayer graphene through a finite number of potential barriers. Further, we evaluate the dispersion relation in a bilayer graphene superlattice with a periodic potential applied to…

介观与纳米尺度物理 · 物理学 2011-01-21 M. Barbier , P. Vasilopoulos , F. M. Peeters , J. Milton Pereira

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical…

介观与纳米尺度物理 · 物理学 2015-09-16 Sergio C. de la Barrera , Randall M. Feenstra

We performed a series of theoretical transport studies on Y-branch electron waveguides which are embedded in mid-size armchair graphene nanoribbons (AGNRs). Non-equilibrium Greens function (NEGF) with different approximations of…

介观与纳米尺度物理 · 物理学 2018-11-14 Vahid Mosallanejad , Kuei-Lin Chiu , Guo-ping Guo