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The dielectric breakdown at metal-oxide interfaces is a critical electronic device failure mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation for this phenomenon. Theoretical band alignment studies,…

材料科学 · 物理学 2016-10-28 Eric Tea , Jianqiu Huang , Celine Hin

The electronic structure of the corundum-type transition-metal oxides V2O3 and Ti2O3 is studied by means of the augmented spherical wave method, based on density-functional theory and the local density approximation. Comparing the results…

强关联电子 · 物理学 2007-05-23 V. Eyert , U. Schwingenschloegl , U. Eckern

Understanding the nature of the interaction at the graphene/metal interfaces is the basis for graphene-based electron- and spin-transport devices. Here we investigate the hybridization between graphene- and metal-derived electronic states…

材料科学 · 物理学 2014-07-17 H. Vita , S. Boettcher , K. Horn , E. N. Voloshina , R. E. Ovcharenko , Th. Kampen , A. Thissen , Yu. S. Dedkov

We study the interlayer pairing states in layered systems of two different 2d electronic subsystems, one with relativistic linear and the other with non-relativistic parabolic spectrum. The complex order parameter of the paired state has a…

超导电性 · 物理学 2021-12-17 Andreas Sinner , Yurii E. Lozovik , Klaus Ziegler

Motivated by experiments on atomically smooth layers of LaTiO$_3$, a Mott insulator, sandwiched between layers of SrTiO$_3$, a band insulator, a simple model for such heterostructures is studied using quasi one-dimensional lattices and the…

强关联电子 · 物理学 2009-11-11 S. S. Kancharla , E. Dagotto

Hybridization effects play a crucial role in determining the electronic properties of hybrid inorganic/organic interfaces. To gain insight into these important interactions, we perform a first-principles study based on hybrid…

材料科学 · 物理学 2022-04-06 Jannis Krumland , Caterina Cocchi

We investigate a simplified continuum model of a twisted homotrilayer TMD with negligible next-nearest layer couplings. We systematically analyze band structure and topology of various stacking configurations in a twist angle range from…

介观与纳米尺度物理 · 物理学 2023-10-10 Hassan AlBuhairan , Michael Vogl

Using the bosonization technique, which separates charge and spin degrees of freedom, we study a possibility of formation of the holon edge states in a one-dimensional electron system with an energy gap in the charge sector. The results are…

强关联电子 · 物理学 2007-05-23 Andrei V. Lopatin , Victor M. Yakovenko

Organic charge-transfer complexes (CTCs) formed by strong electron acceptor and strong electron donor molecules are known to exhibit exotic effects such as superconductivity and charge density waves. We present a low-temperature scanning…

Electronic flat bands can lead to rich many-body quantum phases by quenching the electron's kinetic energy and enhancing many-body correlation. The reduced bandwidth can be realized by either destructive quantum interference in frustrated…

Metal-organic interfaces determine critical processes in organic electronic devices. The frontier molecular orbitals (highest occupied and lowest unoccupied molecular orbital, HOMO and LUMO) are crucial in determining charge-injection and…

材料科学 · 物理学 2025-04-09 Anubhab Chakraborty , Oliver L. A. Monti

Layered transition metal dichalcogenides (TMDs) are commonly classified as quasi-two-dimensional materials, meaning that their electronic structure closely resembles that of an individual layer, which results in resistivity anisotropies…

We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual…

材料科学 · 物理学 2015-05-18 M. Nakano , H. Alves , A. S. Molinari , S. Ono , N. Minder , A. F. Morpurgo

Analysis of the band structure of TiS$_3$ single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex…

材料科学 · 物理学 2017-05-10 J. A. Silva-Guillén , E. Canadell , P. Ordejón , F. Guinea , R. Roldán

Mixing of atoms at the interface was studied for Mn/Fe magnetic hetero-epitaxial layers on Cu(001) by scanning tunneling microscopy/spectroscopy. The formation of a surface alloy was observed when the Mn layer was thinner than 3 atomic…

介观与纳米尺度物理 · 物理学 2016-05-18 S. Nakashima , T. Miyamachi , F. Komori

Misfit compounds are thermodynamically stable stacks of two-dimensional materials, forming a three-dimensional structure that remains incommensurate in one direction parallel to the layers. As a consequence, no true bonding is expected…

Electronic phases that lie outside the equilibrium ground state offer a route to explore competing configurations in correlated materials. In 1T-TaS2, ultrafast excitation accesses a metallic hidden phase that is distinct from the…

强关联电子 · 物理学 2026-05-22 Turgut Yilmaz , Anil Rajapitamahuni , Suji Park , Houk Jang , Asish K. Kundu , Elio Vescovo

By means of full-potential all-electron density-functional theory and many-body perturbation theory, we compute the band alignment at a prototypical hybrid inorganic/organic interface. The electronic properties of a model system built of…

材料科学 · 物理学 2019-08-21 Dmitrii Nabok , Benjamin Höffling , Claudia Draxl

First-principles FLAPW-GGA band structure calculations were employed to examine the structural, electronic properties and the chemical bonding picture for four ZrCuSiAs-like Th-based quaternary pnictide oxides ThCuPO, ThCuAsO, ThAgPO, and…

材料科学 · 物理学 2011-04-19 V. V. Bannikov , I. R. Shein , A. L. Ivanovskii

Surface scattering of free electrons strongly modifies the electromagnetic response near the interface. Due to the inherent anisotropy of the surface scattering that necessarily reverses the normal the interface component of the electron…

光学 · 物理学 2018-07-11 Evgenii E. Narimanov