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Surface resistivity of hydrogenated amorphous carbon films was measured as a function of the applied electrical field. The measured dependence shows a sharp ambipolar peak near zero gate voltage. Furthermore, we found that in some samples…

材料科学 · 物理学 2014-09-11 Savcho Tinchev

An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally…

介观与纳米尺度物理 · 物理学 2020-07-31 F. Volmer , M. Ersfeld , L. Rathmann , M. Heithoff , L. Kotewitz , K. Watanabe , T. Taniguchi , C. Stampfer , B. Beschoten

The interaction between an electric field and the electric charges in a material is described by electrostatic screening, which in metallic systems is commonly thought to be confined within a distance of the order of the Thomas-Fermi…

介观与纳米尺度物理 · 物理学 2018-10-29 Erik Piatti , Davide Romanin , Renato S. Gonnelli , Dario Daghero

Graphene-derived nanomaterials are emerging as ideal candidates for postsilicon electronics. Elucidating the electronic interaction between an insulating substrate and few-layer graphene (FLG) films is crucial for device applications. Here,…

材料科学 · 物理学 2009-05-08 Sujit S. Datta , Douglas R. Strachan , E. J. Mele , A. T. Charlie Johnson

The electronic states at graphene-SiO$_2$ interface and their inhomogeneity was investigated using the back-gate-voltage dependence of local tunnel spectra acquired with a scanning tunneling microscope. The conductance spectra show two, or…

介观与纳米尺度物理 · 物理学 2017-09-13 Anil Kumar Singh , Anjan K. Gupta

Supercapacitors store energy via the formation of an electric double layer, which generates a strong electric field at the electrode-electrolyte interface. Unlike conventional metallic electrodes, graphene-derived materials suffer from a…

材料科学 · 物理学 2015-03-12 Maxwell D. Radin , Tadashi Ogitsu , Minoru Otani , Juergen Biener , Brandon C. Wood

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as…

材料科学 · 物理学 2009-11-10 Manabu Kiguchi , Manabu Nakayama , Toshihiro Shimada , Koichiro Saiki

We study the effect of perpendicular electric fields on the band structures of ABA and ABC graphene multilayers, and find that the electronic screening effect is significantly different between them. In ABA multilayers, the field produces a…

介观与纳米尺度物理 · 物理学 2015-05-14 Mikito Koshino

Using a scanning electron microscope, we observed a reproducible, discrete distribution of secondary electron intensity stemming from an atomically thick graphene film on a thick insulating substrate. The discrete distribution made it…

材料科学 · 物理学 2010-09-29 Hidefumi Hiura , Hisao Miyazaki , Kazuhito Tsukagoshi

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte…

介观与纳米尺度物理 · 物理学 2015-05-13 Kin Fai Mak , Chun Hung Lui , Jie Shan , Tony F. Heinz

Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been…

介观与纳米尺度物理 · 物理学 2018-09-28 Taiki Hirahara , Ryoya Ebisuoka , Takushi Oka , Tomoaki Nakasuga , Shingo Tajima , Kenji Watanabe , Takashi Taniguchi , Ryuta Yagi

Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or 'scotch-tape method') from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM)…

介观与纳米尺度物理 · 物理学 2014-08-26 E. S. Sadki , H. Okazaki , T. Watanabe , T. Yamaguchi , Y. Takano

While the exponential decay of tunneling probability with barrier thickness is well known, the accompanying oscillations with thickness have been comparatively less explored. Using a tight binding model, we investigate an AB-stacked bilayer…

介观与纳米尺度物理 · 物理学 2025-07-11 Ryo Tamura

We investigate the magnetotransport properties of a thin graphite wire resting on a silicon oxide substrate. The electric field effect is demonstrated with back and side gate electrodes. We study the conductance fluctuations as a function…

介观与纳米尺度物理 · 物理学 2009-11-13 D. Graf , F. Molitor , T. Ihn , K. Ensslin

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO…

We have developed a unique micromechanical method to extract extremely thin graphite samples. Graphite crystallites with thicknesses ranging from 10 - 100 nm and lateral size $\sim$ 2 $\mu$m are extracted from bulk. Mesoscopic graphite…

介观与纳米尺度物理 · 物理学 2009-11-10 Yuanbo Zhang , Joshua P. Small , William V. Pontius , Philip Kim

The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the…

超导电性 · 物理学 2009-11-07 N. Markovic , C. Christiansen , G. Martinez-Arizala , A. M. Goldman

The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge,…

介观与纳米尺度物理 · 物理学 2013-12-10 M. Tortello , A. Sola , Kanudha Sharda , F. Paolucci , J. R. Nair , C. Gerbaldi , D. Daghero , R. S. Gonnelli

The unusual transport properties of graphene are the direct consequence of a peculiar bandstructure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting, and the transition from a pure 2D to…

材料科学 · 物理学 2007-05-23 Taisuke Ohta , Aaron Bostwick , J. L. McChesney , Thomas Seyller , Karsten Horn , Eli Rotenberg

We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of…