相关论文: Current-induced magnetization switching in MgO bar…

We study spin-dependent transport properties in magnetic tunneling junctions (MTJs) with semiconductor barriers, Fe/CuInSe$_2$/Fe(001) and Fe/CuGaSe$_2$/Fe(001). By analyzing their transmittances at zero bias voltage on the basis of the…

Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…

Stochastic magnetic tunnel junctions (s-MTJs) are core components for spintronics-based probabilistic computing (p-computing), a promising candidate for energy-efficient unconventional computing. To achieve reliable performance under…

We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…

The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…

It is shown that the maximum stable output of a CPP-GMR sensor is increased significantly by using a synthetic ferrimagnet free layer, provided the electron current flows from free layer to reference layer. This free layer allows a larger…

Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…

The magnetic orientations and switching fields of a CoCrPt-Ru-CoCrPt synthetic ferrimagnet with perpendicular magnetic anisotropy have been studied in the temperature range from 2 K to 300 K. It was found that two sets of magnetic…

The minority-spin Fe/MgO interface states are at the Fermi level in density functional theory (DFT), but experimental evidence and GW calculations place them slightly higher in energy. This small shift can strongly influence tunneling…

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…

We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the…

We present ferromagnetic Nb/Al2O3/Ni60Cu40/Nb Josephson junctions (SIFS) with an ultrathin Al2O3 tunnel barrier. The junction fabrication was optimized regarding junction insulation and homogeneity of current transport. Using…

We present an experimental and theoretical study of the magnetic field dependence of the mode frequency of thermally excited spin waves in rectangular shaped nanopillars of lateral sizes 60x100, 75x150, and 105x190 nm2, patterned from…

Magnetic skyrmions are topologically protected spin textures that can act as reconfigurable nanoscale information carriers. In synthetic antiferromagnets (SAFs), interlayer exchange coupling offers an additional control parameter beyond the…

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were…

We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in a MTJ with Co40Fe40B20 reference and free layers reached 355% at…

The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…

Quantitative theory of the Josephson effect in SFIFS junctions (S denotes bulk superconductor, F - metallic ferromagnet, I - insulating barrier) is presented in the dirty limit. Fully self-consistent numerical procedure is employed to solve…

We perform an experimental study of DC current induced microwave emission in a magnetic tunnel junction (MTJ) consisting of three active magnetic layers. For this tri-layer structure, in addition to a conventional bilayer orthogonal MTJ…