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Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…

介观与纳米尺度物理 · 物理学 2010-09-10 Benjamin E. Feldman , Jens Martin , Amir Yacoby

Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric…

介观与纳米尺度物理 · 物理学 2015-05-27 Gregory M. Rutter , Suyong Jung , Nikolai N. Klimov , David B. Newell , Nikolai B. Zhitenev , Joseph A. Stroscio

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we…

The electromagnetic response of bilayer graphene in a magnetic field is studied in comparison with that of monolayer graphene. Both types of graphene turn out to be qualitatively quite similar in dielectric and screening characteristics,…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Misumi , K. Shizuya

The generalized tight-binding model is developed to investigate the magneto-electronic properties in twisted bilayer graphene system. All the interlayer and intralayer atomic interactions are included in the Moire superlattice. The twisted…

介观与纳米尺度物理 · 物理学 2019-07-23 Chiun-Yan Lin , Ming-Fa Lin

Graphene is a gapless semiconductor in which conduction and valence band wavefunctions differ only in the phase difference between their projections onto the two sublattices of the material's two-dimensional honeycomb crystal structure. We…

介观与纳米尺度物理 · 物理学 2012-02-14 Allan H. MacDonald , Jeil Jung , Fan Zhang

Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under a layer-asymmetric strain (where the upper layer…

介观与纳米尺度物理 · 物理学 2014-12-04 J. A. Crosse

We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles…

介观与纳米尺度物理 · 物理学 2019-11-05 F. J. Culchac , Rodrigo B. Capaz , Leonor Chico , E. Suarez Morell

Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion.…

介观与纳米尺度物理 · 物理学 2015-07-03 Søren Schou Gregersen , Jesper Goor Pedersen , Stephen R. Power , Antti-Pekka Jauho

We analyze the spectroscopic features of bilayer graphene determined by the formation of pairs of low-energy and split bands in this material. We show that the inter-Landau-level absorption spectrum in bilayer graphene at high magnetic…

介观与纳米尺度物理 · 物理学 2007-05-23 D. S. L. Abergel , Vladimir I. Fal'ko

Charge neutral bilayer graphene has a gapped ground state as transport experiments demonstrate. One of the plausible such ground states is layered antiferromagnetic spin density wave (LAF) state, where the spins in top and bottom layers…

介观与纳米尺度物理 · 物理学 2013-12-11 Jie Yuan , Dong-Hui Xu , Hao Wang , Yi Zhou , Jin-Hua Gao , Fu-Chun Zhang

Bilayer graphene in a magnetic field supports eight zero-energy Landau levels, which, as a tunable band gap develops, evolve into two nearly-degenerate quartets separated by the band gap. A close look is made into the properties of such an…

介观与纳米尺度物理 · 物理学 2015-05-14 K. Shizuya

Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the…

介观与纳米尺度物理 · 物理学 2012-02-15 F. Freitag , J. Trbovic , M. Weiss , C. Schönenberger

We demonstrate that single layer graphene exhibits the electronic structure of a bilayer when it is connected to two gated bilayers. The energy gap characteristic for gated bilayer is induced in the single layer and it persists for…

介观与纳米尺度物理 · 物理学 2019-07-31 Wlodzimierz Jaskolski

We consider graphene bilayer in a constant magnetic field of arbitrary orientation (i.e. tilted with respect to the graphene plane). In the low energy approximation to tight binding model with Peierls substitution, we find the exact…

介观与纳米尺度物理 · 物理学 2010-08-04 Young-Hwan Hyun , Yoonbai Kim , Corneliu Sochichiu , Min-Young Choi

In this review, we provide an in-depth description of the physics of monolayer and bilayer graphene from a theorist's perspective. We discuss the physical properties of graphene in an external magnetic field, reflecting the chiral nature of…

材料科学 · 物理学 2014-11-20 D. S. L. Abergel , V. Apalkov , J. Berashevich , K. Ziegler , Tapash Chakraborty

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular…

Bilayer graphene provides a unique platform to explore the rich physics in quantum Hall effect. The unusual combination of spin, valley and orbital degeneracy leads to interesting symmetry broken states with electric and magnetic field.…

介观与纳米尺度物理 · 物理学 2019-03-27 Manabendra Kuiri , Anindya Das

With the two-band continuum model, we study the broken inversion and time-reversal symmetry state of electrons with finite-range repulsive interactions in bilayer graphene. With the analytical solution to the mean-field Hamiltonian, we…

强关联电子 · 物理学 2012-12-19 Xin-Zhong Yan , C. S. Ting
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