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Stimulated by recent advances in isolating graphene, we discovered that quantum dot can be trapped in Z-shaped graphene nanoribbon junciton. The topological structure of the junction can confine electronic states completely. By varying…

介观与纳米尺度物理 · 物理学 2015-05-13 Z. F. Wang , Huaixiu Zheng , Q. W. Shi , Jie Chen , Qunxiang Li , J. G. Hou

Void defect is a possible origin of ferromagnetic like feature of pure carbon material. Applying density functional theory to void defect induced graphene nano ribbon (GNR), a detailed relationship between multiple spin state and structure…

材料科学 · 物理学 2021-07-06 Norio Ota , Laszlo Nemes

Transport experiments in twisted bilayer graphene (TBG) show a fan-like region near integer fillings with a resistivity linear in temperature down to the lowest temperature measured. This suggests quantum-critical points at the boundaries…

强关联电子 · 物理学 2023-12-29 C. M. Varma

We describe charging a quantum dot induced electrostatically within a semiconducting graphene nanoribbon by electrons or holes. The applied model is based on a tight-binding approach with the electron-electron interaction introduced by a…

介观与纳米尺度物理 · 物理学 2015-09-30 D. P. Żebrowski , B. Szafran

We provide a thorough study of a carbon divacancy, a fundamental but almost unexplored point defect in graphene. Low temperature scanning tunneling microscopy (STM) imaging of irradiated graphene on different substrates enabled us to…

The electrical conductivity of graphene containing point defects is studied within the binary alloy model in its dependence on the Fermi level position at the zero temperature. It is found that the minimal conductivity value does not have a…

无序系统与神经网络 · 物理学 2015-05-18 Yuriy V. Skrypnyk , Vadim M. Loktev

Motivated by recent experiments of successfully carving out stable carbon atomic chains from graphene, we investigate a device structure of a carbon chain connecting two zigzag graphene nanoribbons with highly tunable spin-dependent…

介观与纳米尺度物理 · 物理学 2013-06-17 Yuehua Xu , Bao-Ji Wang , San-Huang Ke

Graphene nanoribbons (GNR) in mutually perpendicular electric and magnetic fields are shown to exhibit dramatic changes in their band structure and electron transport properties. A strong electric field across the ribbon induces multiple…

材料科学 · 物理学 2015-05-18 Oleksiy Roslyak , Godfrey Gumbs , Danhong Huang

We investigate the combined influence of structural defects and uniaxial longitudinal strain on the electronic transport properties of armchair graphene nanoribbons using the numerical approach based on the semiempirical tight-binding…

介观与纳米尺度物理 · 物理学 2013-09-30 Thomas Lehmann , Dmitry A. Ryndyk , Gianaurelio Cuniberti

Topological defects in graphene materials introduce exotic properties which are absent in their defect-free counterparts with both fundamental importance and technological implications. Although individual topological defects have been…

介观与纳米尺度物理 · 物理学 2022-02-09 Can Li , Yu Liu , Yufeng Liu , Fu-Hua Xue , Dandan Guan , Yaoyi Li , Hao Zheng , Canhua Liu , Jinfeng Jia , Pei-Nian Liu , Deng-Yuan Li , Shiyong Wang

A number of moir\'e graphene systems have nearly flat topological bands where electron motion is strongly correlated. Though microscopically these systems are only quasiperiodic, they can typically be treated as translation invariant to an…

介观与纳米尺度物理 · 物理学 2021-03-10 Dan Mao , T. Senthil

We investigate the universal properties of quantum transport in graphene nanowires that engender subtle universal conductance fluctuations. We present results for three of the main microscopic models that describe the sublattice of graphene…

介观与纳米尺度物理 · 物理学 2020-09-07 Louis G. C. S. Sá , A. L. R. Barbosa , J. G. G. S. Ramos

Topological defects in graphene, dislocations and grain boundaries, are still not well understood despites the considerable number of experimental observations. We introduce a general approach for constructing dislocations in graphene…

介观与纳米尺度物理 · 物理学 2010-05-21 Oleg V. Yazyev , Steven G. Louie

We show that the low temperature electron transport properties of chemically functionalized graphene can be explained as sequential tunneling of charges through a two dimensional array of graphene quantum dots (GQD). Below 15 K, a total…

介观与纳米尺度物理 · 物理学 2015-05-20 Daeha Joung , Lei Zhai , Saiful I. Khondaker

Within the tight binding approximation, we study the dependence of the electronic band structure and of the optical conductivity of a graphene single layer on the modulus and direction of applied uniaxial strain. While the Dirac cone…

介观与纳米尺度物理 · 物理学 2010-01-15 F. M. D. Pellegrino , G. G. N. Angilella , R. Pucci

We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for…

介观与纳米尺度物理 · 物理学 2020-04-07 Petra Högl , Tobias Frank , Klaus Zollner , Denis Kochan , Martin Gmitra , Jaroslav Fabian

The electrical properties of a carbon nanotube depend strongly on its lattice structure as defined by chiral and translational vectors. A toroidal shape for a nanotube allows various twisted structures to exist along the direction of the…

介观与纳米尺度物理 · 物理学 2009-11-10 K. Sasaki , Y. Kawazoe

Controlling the properties of materials by driving them out of equilibrium is an exciting prospect that has only recently begun to be explored. In this paper we give a striking theoretical example of such materials design: a tunable gap in…

介观与纳米尺度物理 · 物理学 2013-04-29 Thomas Iadecola , David Campbell , Claudio Chamon , Chang-Yu Hou , Roman Jackiw , So-Young Pi , Silvia Viola Kusminskiy

The electronic structure of graphitic cones exhibits distinctive topological features associated with the apical disclinations. Aharonov-Bohm magnetoconductance oscillations (period Phi_0) are completely absent in rings fabricated from…

材料科学 · 物理学 2009-10-31 P. E. Lammert , V. H. Crespi

Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing…

介观与纳米尺度物理 · 物理学 2010-09-28 Oleg V. Yazyev , Steven G. Louie