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Optical properties of planar thin film metamaterials were measured at room and liquid nitrogen temperatures using terahertz time-domain spectroscopy. The operation of metamaterials at cryogenic temperatures is anticipated to be a promising…

This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe$_2$ nanosheets, derived from the bulk single crystal. Contrary to conventional trend observed in…

介观与纳米尺度物理 · 物理学 2025-09-15 Aarti Lakhara , Lars Thole , Rolf J. Haug , P. A. Bhobe

The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…

介观与纳米尺度物理 · 物理学 2007-05-23 K. S. Novoselov , A. K. Geim , S. V. Morozov , S. V. Dubonos , Y. Zhang , D. Jiang

We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…

介观与纳米尺度物理 · 物理学 2014-08-22 Dmitry Ovchinnikov , Adrien Allain , Ying-Sheng Huang , Dumitru Dumcenco , Andras Kis

The Hall effect is investigated for eight superconducting Fe(Se_0.5_Te_0.5_) thin films grown on MgO and LaSrAlO_4_ substrates with different transition temperatures (T_c_). The normal Hall coefficients (R_H_) have positive values with…

超导电性 · 物理学 2015-05-14 I. Tsukada , M. Hanawa , S. Komiya , T. Akiike , R. Tanaka , Y. Imai , A. Maeda

We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A…

凝聚态物理 · 物理学 2014-10-13 V. Y. Butko , X. Chi , D. V. Lang , A. P. Ramirez

In-situ transmission electron microscopy (TEM) has become an important technique to study dynamic processes at highest spatial resolution and one branch is the investigation of phenomena related with electrical currents. Here, we present…

介观与纳米尺度物理 · 物理学 2025-11-13 Simon Hettler , Raul Arenal

Critical temperature reduction $\Delta T_c$ is considered for a thin film of a layered superconductor (S) with a rough surface covered by a thick layer of a normal metal (N). The roughness of the SN interface increases the penetration of…

超导电性 · 物理学 2009-10-30 R. G. Mints , I. B. Snapiro

A method has been developed to inject mobile charges at the surface of organic molecular crystals, and the DC transport of field-induced holes has been measured at the surface of pentacene single crystals. To minimize damage to the soft and…

凝聚态物理 · 物理学 2009-11-10 J. Takeya , C. Goldmann , S. Haas , K. P. Pernstich , B. Ketterer , B. Batlogg

We investigated the pressure effects of a superconductivity on thin films of Sn. Elemental superconductor Sn with a body-centered tetragonal structure, $\beta$-Sn, exhibits superconductivity below the superconducting transition temperature…

The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs,…

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of…

Defect induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap could be prolonged by several orders of magnitude as compared to shallow trap, resulting…

Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…

材料科学 · 物理学 2007-05-23 D. R. McCamey , M. Francis , J. C. McCallum , A. R. Hamilton , A. D. Greentree , R. G. Clark

A comprehensive rational thermal material design paradigm requires the ability to reduce and enhance the thermal conductivities of nanomaterials. In contrast to the existing ability to reduce the thermal conductivity, methods that allow to…

介观与纳米尺度物理 · 物理学 2017-10-09 Abhinav Malhotra , Kartik Kothari , Martin Maldovan

Terahertz (THz) radiation has uses from security to medicine; however, sensitive room-temperature detection of THz is notoriously difficult. The hot-electron photothermoelectric effect in graphene is a promising detection mechanism:…

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the graphene-like mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman…

We present transport, Hall effect, electronic tunnelling and penetration depth studies in 3D homogeneously disordered epitaxial NbN thin films with disorder ranging from the moderately clean limit (k_Fl~10.12) to the very dirty limit…

We report on electronic-structure calculations for the pentacene and rubrene crystals, based on experimental crystal geometries measured at different temperatures. The results are in very good agreement with angle-resolved photoelectron…

材料科学 · 物理学 2012-11-01 Yuan Li , Veaceslav Coropceanu , Jean-Luc Brédas

A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film…