相关论文: Single-electron quantum dot in Si/SiGe with integr…
The ability to transport single electrons on a quantum dot array dramatically increases the freedom in designing quantum computation schemes that can be implemented on solid-state devices. So far, however, routing schemes to precisely…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
The implementation of a spin qubit in a quantum ring occupied by one or a few electrons is proposed. Quantum bit involves the Zeeman sublevels of the highest occupied orbital. Such a qubit can be initialized, addressed, manipulated, read…
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could…
Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and…
We have investigated few-body states in vertically stacked quantum dots. Due to small inter-dot tunneling rate, the coupling in our system is in a previously unexplored regime where electron-hole exchange is the dominant spin interaction.…
We consider a double-quantum-dot (DQD) qubit which contains six electrons instead of the usual one or two. In this spin qubit, quantum information is encoded in a low-lying singlet-triplet space much as in the case of a two-electron DQD…
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the…
Constructing a quantum computer capable of broad and important applications is likely to require millions of addressable physical qubits, posing the challenge of large-scale integration of quantum systems with classical electronics. Fully…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots…
Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single…
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full…
An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arbitrary spin rotations must be possible. Here we demonstrate…
This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist's viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to…
We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for…
We discuss the possibility to generate, manipulate, and probe single spins in single-level quantum dots coupled to ferromagnetic leads. The spin-polarized currents flowing between dot and leads lead to a non-equilibrium spin accumulation,…
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated…