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相关论文: Universal Scaling in Non-equilibrium Transport Thr…

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Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single-molecule transistor…

介观与纳米尺度物理 · 物理学 2009-04-20 G. D. Scott , Z. K. Keane , J. W. Ciszek , J. M. Tour , D. Natelson

We revisited the scaling behavior of the transport properties of a quantum dot system described by the spin-1/2 Anderson model using analytical methods. In the low temperature limit we show that the conductance has a universal behavior with…

介观与纳米尺度物理 · 物理学 2009-02-27 M. Crisan , I. Grosu , I. Tifrea

The universal scaling behavior is studied for nonequilibrium transport through a quantum dot. To describe the dot we use the standard Anderson impurity model and use the non-equilibrium non-crossing approximation in the limit of infinite…

强关联电子 · 物理学 2015-05-14 P. Roura-Bas

We calculate the conductance through a quantum dot weakly coupled to metallic leads, modeled by the spin-1/2 Anderson model with finite Coulomb repulsion $U$. We adopt the non-crossing approximation method in its finite-$U$ extension…

强关联电子 · 物理学 2009-11-07 D. Gerace , E. Pavarini , L. C. Andreani

Using non-equilibrium renormalized perturbation theory, we calculate the conductance G as a function of temperature T and bias voltage V for an Anderson model, suitable for describing transport properties through a quantum dot. For…

强关联电子 · 物理学 2009-10-20 Julian Rincon , A. A. Aligia , K. Hallberg

We theoretically and experimentally study the universal scaling property of the spin-1/2 Kondo state in the magnetic field dependence of bias-voltage linear conductance through a quantum dot at low temperatures. We discuss an efficient and…

The time-dependent non-crossing approximation is employed for the single-electron transistor to calculate the transient response of the conductance for a variety of temperatures and biases. We consider the case when the dot-lead tunneling…

强关联电子 · 物理学 2007-05-23 Artur F. Izmaylov , Ali Ihsan Goker , Peter Nordlander , Barry Friedman

We consider a quantum dot coupled to two BCS superconductors with same gap energies $\Delta$. The transport properties are investigated by means of infinite-$U$ noncrossing approximation. In equilibrium density of states, Kondo effect shows…

超导电性 · 物理学 2016-08-31 S. Y. Liu , X. L. Lei

We study a double quantum dot in the regime where each dot carries a spin-1/2. This system is described by the 2-impurity Kondo model, having a non-Fermi liquid fixed point for a critical value of the inter-impurity coupling. The…

介观与纳米尺度物理 · 物理学 2015-05-13 Eran Sela , Ian Affleck

We investigate theoretically the linear and nonlinear conductance through a nanostructure with two-fold degenerate single levels, corresponding to the transport through nanostructures such as a carbon nanotube, or double dot systems with…

介观与纳米尺度物理 · 物理学 2017-10-23 Haruka Oguchi , Nobuhiko Taniguchi

The quintessential description of Kondo physics in equilibrium is obtained within a scaling picture that shows the buildup of Kondo screening at low temperature. For the non-equilibrium Kondo model with a voltage bias the key new feature…

强关联电子 · 物理学 2010-03-22 Peter Fritsch , Stefan Kehrein

We study the Kondo effect in a quantum dot driven out of equilibrium by an external ac field. The Kondo effect can be probed by measuring the dc current induced by an auxiliary dc bias $V_{dc}$ applied across the dot. In the absence of ac…

介观与纳米尺度物理 · 物理学 2009-10-31 A. Kaminski , Yu. V. Nazarov , L. I. Glazman

We consider electron transport through a quantum dot described by the Kondo model in the regime of large transport voltage V in the presence of a magnetic field B with max(V,B) >> T_K. The electric current I and the local magnetization M…

强关联电子 · 物理学 2009-11-07 A. Rosch , J. Paaske , J. Kroha , P. Wölfle

We calculate the conductance through a single quantum dot coupled to metallic leads, modeled by the spin 1/2 Anderson model. We adopt the finite-U extension of the noncrossing approximation method. Our results are in good agreement with…

强关联电子 · 物理学 2007-05-23 D. Gerace , E. Pavarini , L. C. Andreani

We calculate the finite temperature and non-equilibrium electric current through systems described generically at low energy by a singlet and \emph{two} spin doublets for $N$ and $N \pm 1$ electrons respectively, coupled asymmetrically to…

强关联电子 · 物理学 2011-08-24 P. Roura-Bas , L. Tosi , A. A. Aligia , K. Hallberg

The low temperature electrical conductance through correlated quantum dots provides a sensitive probe of the physics (e.g., of Fermi-liquid vs non-Fermi-liquid behavior) of such systems. Here, we investigate the role of level asymmetry…

强关联电子 · 物理学 2013-04-29 L. Merker , S. Kirchner , E. Muñoz , T. A. Costi

We discuss the temperature-dependent thermoelectric transport properties of semiconductor nanostructures comprising a quantum dot coupled to quantum wires: the thermal dependence of the electrical conductance, thermal conductance, and…

介观与纳米尺度物理 · 物理学 2021-02-17 D. F. Aranguren-Quintero , E. Ramos , J. Silva-Valencia , M. S. Figueira , L. N. Oliveira , R. Franco

We analyze universal transport properties of a strongly interacting quantum dot in the Kondo regime when the quantum dot is placed in an external magnetic field. The quantum dot is described by the asymmetric Anderson model with the spin…

介观与纳米尺度物理 · 物理学 2013-07-30 Sergey Smirnov , Milena Grifoni

The linear and nonlinear transport properties of the single-electron transistor at the degeneracy point are investigated for the case of weak single-mode tunnel junctions. Two opposing scenarios are considered, distinguished by whether or…

强关联电子 · 物理学 2007-05-23 Amnon Buxboim , Avraham Schiller

We investigate theoretically the thermoelectric transport through a circuit implementation of the three-channel "charge" Kondo model quantum simulator [Z. Iftikhar et al., Science 360, 1315 (2018)]. The universal temperature scaling law of…

介观与纳米尺度物理 · 物理学 2020-07-09 T. K. T. Nguyen , M. N. Kiselev
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