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The doping and temperature dependent optical conductivity spectra of the quasi-two-dimensional Ca_{2-x}Sr_xRuO_4 (0.0=<x=<2.0) system were investigated. In the Mott insulating state, two electron correlation-induced peaks were observed…

强关联电子 · 物理学 2009-11-07 J. S. Lee , Y. S. Lee , T. W. Noh , S. -J. Oh , Jaejun Yu , S. Nakatsuji , H. Fukazawa , Y. Maeno

The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…

强关联电子 · 物理学 2007-05-23 F. Mancini

We examine finite-temperature phase transitions in the two-orbital Hubbard model with different bandwidths by means of the dynamical mean-field theory combined with the continuous-time quantum Monte Carlo method. It is found that there…

强关联电子 · 物理学 2015-10-28 Aaram J. Kim , MooYoung Choi , Gun Sang Jeon

The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

We study the dynamics of a two-level system described by a slowly varying Hamiltonian and weakly coupled to the Ohmic environment. We follow the Bloch--Redfield perturbative approach to include the effect of the environment on qubit…

量子物理 · 物理学 2014-05-20 Canran Xu , Amrit Poudel , Maxim G. Vavilov

We study the asymmetric Hubbard model at half-filling as a generic model to describe the physics of two species of repulsively interacting fermionic cold atoms in optical lattices. We use Dynamical Mean Field Theory to obtain the…

强关联电子 · 物理学 2012-01-11 E. A. Winograd , R. Chitra , M. J. Rozenberg

There is increasing recognition that the multiorbital nature of the 3d electrons is important to the proper description of the electronic states in the normal state of the iron-based superconductors. Earlier studies of the pertinent…

强关联电子 · 物理学 2017-09-08 Rong Yu , Qimiao Si

Motivated by recent experiments on vanadium spinels, $A$V$_2$O$_4$, that show an increasing degree of electronic delocalization for smaller cation sizes, we study the evolution of orbital ordering (OO) between the strong and…

强关联电子 · 物理学 2012-08-13 Yasuyuki Kato , Gia-Wei Chern , K. A. Al-Hassanieh , Natalia B. Perkins , C. D. Batista

The Hubbard model with large orbital degeneracy has recently gained relevance in the context of ultracold earth alkali like atoms. We compute its static properties in the SU(2M) symmetric limit for up to M=8 bands at half filling within…

强关联电子 · 物理学 2013-02-21 N. Blümer , E. Gorelik

Using Quantum Monte Carlo we compute thermodynamics and spectra for the orbitally degenerate Hubbard model in infinite spatial dimensions. With increasing orbital degeneracy we find in the one-particle spectra: broader Hubbard bands…

强关联电子 · 物理学 2009-10-31 J. E. Han , M. Jarrell , D. L. Cox

Taking the orbital degeneracy of $e_g$ conduction bands and the Coulomb interaction into account in a double-exchange model, we investigate charge dynamics of perovskite Mn oxides by the Lancz$\ddot{\rm o}$s diagonalization method. In the…

强关联电子 · 物理学 2009-10-31 Hiroki Nakano , Yukitoshi Motome , Masatoshi Imada

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

强关联电子 · 物理学 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

We study the finite-temperature properties of the half-filled two-band Hubbard model in the presence of Hund's rule coupling and orbital anisotropy. We use the mean-field treatment of the $Z_2$ slave-spin theory with a finite-temperature…

强关联电子 · 物理学 2019-11-27 Alejandro Mezio , Ross H. McKenzie

We present the influence of spin correlation on the metal-insulator transitions (MIT) in two-orbital Hubbard models by the Kotliar-Ruckenstein slave-boson approach. In the asymmetric half-filling situation, the two orbits simultaneously…

强关联电子 · 物理学 2015-03-19 Ya-Min Quan , Liang-Jian Zou , Hai-Qing Lin

We present spectral and optical properties of the Hubbard model on a two-dimensional square lattice using a generalization of dynamical mean-field theory to magnetic states in finite dimension. The self-energy includes the effect of spin…

强关联电子 · 物理学 2009-10-31 Marcus Fleck , Alexander I. Lichtenstein , Andrzej M. Oles , L. Hedin

We consider the orbitally degenerate 3-band Hubbard model with on-site interactions which favor low spin and low orbital angular momentum using standard second order perturbation theory in the large Hubbard-U limit. At even integer filling…

强关联电子 · 物理学 2009-11-10 M. Granath , S. Ostlund

Mott metal-insulator transitions in an M-fold orbitally degenerate Hubbard model are studied by means of a generalization of the linearized dynamical mean-field theory. The method allows for an efficient and reliable determination of the…

强关联电子 · 物理学 2009-11-07 Y. Ono , M. Potthoff , R. Bulla

We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak…

强关联电子 · 物理学 2010-03-01 Milos M. Radonjic , D. Tanaskovic , V. Dobrosavljevic , K. Haule

Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…

强关联电子 · 物理学 2007-12-11 M. Aichhorn , E. Arrigoni , M. Potthoff , W. Hanke

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis