相关论文: Dynamic Spin-Polarized Resonant Tunneling in Magne…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
The dependence of tunneling conductance and tunneling magnetoresistance (TMR) on barrier thickness in magnetic tunnel junctions is theoretically investigated. The complex band structure of the insulator is taken into account, and an…
Results of theoretical study of spin-polarized tunneling in ferromagnet/superconductor junctions are presented. Spin and charge currents are calculated as a function of applied voltage and spin polarization in a ferromagnet. The model takes…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
The tunneling splitting of the energy levels of a ferromagnetic particle in the presence of an applied magnetic field - previously derived only for the ground state with the path integral method - is obtained in a simple way from…
A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching is analyzed of the layers by a magnetic field perpendicular to the initial magnetizations. In such a situation,…
A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons…
Coherent spin-dependent electronic transport is investigated in a molecular junction made of polymeric chain attached to ferromagnetic electrodes (Ni and Co, respectively). Molecular system is described by a simple Huckel model, while the…
Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…
A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between a ferroelectric barrier and magnetic La1-xSrxMnO3 electrode. Using…
We present a formula for tunneling conductance in ballistic ferromagnet/ferromagnetic insulator/superconductor junctions where the superconducting state has opposite spin pairing symmetry. The formula can involve correctly a ferromagnetism…
Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source…
We consider tunnel ionization of an atom or molecule in a strong field within an analytical treatment of the R-matrix method, in which an imaginary boundary is set up inside the classically forbidden region that acts as a source of ionized…
We consider an infinite three-dimensional waveguide that far from the coordinate origin coincides with a cylinder. The waveguide has two narrows of diameter $\varepsilon$. The narrows play the role of effective potential barriers for the…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…
We theoretically study the recently observed tunnel-barrier-enhanced dc voltage signals generated by magnetization precession in magnetic tunnel junctions. While the spin pumping is suppressed by the high tunneling impedance, two…
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the…
We study the transmission through single and double ferromagnetic barriers on the surface of a topological insulator. By adjusting the gate voltage and magnetization oreintation, the ferromagnetic barrier can be tuned into various…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…