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We have performed an approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon (a-Si:H) using a molecular dynamics method. A 216 atom model for pure amorphous silicon (a-Si) has been employed as a…

无序系统与神经网络 · 物理学 2009-10-31 Serge M. Nakhmanson , D. A. Drabold

We present new atomistic models of amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) surfaces. The a-Si model included 4096 atoms and was obtained using local orbital density functional theory. By analyzing a slab model…

材料科学 · 物理学 2025-06-24 Kishor Nepal , Aashish Gautam , Chinonso Ugwumadu , David Drabold

The sample dependence of various properties of hydrogenated amorphous silicon ($a$-Si:H) have been studied with 216 silicon atoms and 24 hydrogen atoms using the density functional based tight binding molecular dynamics simulations. The…

其他凝聚态物理 · 物理学 2009-11-10 Ranber Singh , S. Prakash , Nitya Nath Shukla , R. Prasad

We study the distribution of hydrogen and various hydride configurations in realistic models of a-Si:H for two different concentration generated via experimentally constrained molecular relaxation approach (ECMR) [1]. The microstructure…

材料科学 · 物理学 2015-05-14 Rajendra Timilsina , Parthapratim Biswas

This paper presents a large-scale $ab$ $initio$ simulation study of amorphous silicon hydride ($a$-Si$_{\text{1-x}}$H$_{\text{x}}$) with an emphasis on the structure and properties of the material across a range of hydrogen concentration by…

材料科学 · 物理学 2023-09-19 Raymond Atta-Fynn , Somilkumar J. Rathi , Harsh Arya , Parthapratim Biswas

Molecular hydrogen in silicon has been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 300 to 900 K. Interatomic…

材料科学 · 物理学 2009-07-31 Carlos P. Herrero , Rafael Ramirez

We present a novel approach for parameter-free modeling of the structural, dynamical and electronic properties of non-crystalline materials based on ab-initio Molecular Dynamics, improved signal processing technique and computer…

材料科学 · 物理学 2009-11-13 I. M. Kupchak , F. Gaspari , A. I. Shkrebtii , J. Perz

We use empirical molecular dynamics technique to study the low-energy vibrations in a large 4096 atom model for pure amorphous silicon and a set of models with voids of different size based on it. Numerical vibrational eigenvalues and…

无序系统与神经网络 · 物理学 2009-10-31 Serge M. Nakhmanson , D. A. Drabold

Amorphous silicon (a-Si) models are analyzed for structural, electronic and vibrational characteristics. Several models of various sizes have been computationally fabricated for this analysis. It is shown that a recently developed…

无序系统与神经网络 · 物理学 2018-11-29 Dale Igram , Bishal Bhattarai , Parthapratim Biswas , D. A. Drabold

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analysed by Raman spectroscopy and differential scanning…

材料科学 · 物理学 2010-08-02 F. Kail , J. Farjas , P. Roura , C. Secouard , O. Nos , J. Bertomeu , F. Alzina , P. Roca i Cabarrocas

It is possible to confine vibrational modes to silicon nanocrystals by encapsulating them within hydrogenated amorphous silicon. This is not because of the small impedance mismatch between materials but, rather, is due to higher order…

介观与纳米尺度物理 · 物理学 2016-05-03 Luigi Bagolini , Alessandro Mattoni , Mark T. Lusk

Hydrogenation of amorphous silicon (a-Si:H) is critical for reducing defect densities, passivating mid-gap states and surfaces, and improving photoconductivity in silicon-based electro-optical devices. Modelling the atomic scale structure…

Preparing realistic atom-scale models of amorphous silicon (a-Si) is a decades-old condensed matter physics challenge. Herein, we combine the Activation Relaxation Technique nouveau (ARTn) to a Moment Tensor Potential (MTP) to generate…

无序系统与神经网络 · 物理学 2025-03-25 Karim Zongo , Hao Sun , Claudiane Ouellet-Plamondon , Normand Mousseau , Laurent Karim Béland

At low temperatures, dynamics in amorphous silicon occurs through a sequence of discrete activated events that locally reorganize the topological network. Using the activation-relaxation technique, a data base containing over 8000 such…

无序系统与神经网络 · 物理学 2009-10-31 Normand Mousseau , G. T. Barkema

Numerical studies of amorphous silicon in harmonic approximation show that the highest 3.5% of vibrational normal modes are localized. As vibrational frequency increases through the boundary separating localized from delocalized modes, near…

无序系统与神经网络 · 物理学 2007-05-23 William Garber , Folkert M. Tangerman , Philip B. Allen , Joseph L. Feldman

The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of…

材料科学 · 物理学 2020-11-04 Eike Gericke , Jimmy Melskens , Robert Wendt , Markus Wollgarten , Armin Hoell , Klaus Lips

We show that harmonic vibrations in amorphous silicon can be decomposed to transverse and longitudinal components in all frequency range even in the absence of the well defined wave vector ${\bf q}$. For this purpose we define the…

无序系统与神经网络 · 物理学 2016-01-20 Y. M. Beltukov , C. Fusco , A. Tanguy , D. A. Parshin

The dynamics of amorphous silicon at low temperatures can be characterized by a sequence of discrete activated events, through which the topological network is locally reorganized. Using the activation-relaxation technique, we create more…

凝聚态物理 · 物理学 2009-10-31 G. T. Barkema , Normand Mousseau

Strain in a material induces shifts in vibrational frequencies, which is a probe of the nature of the vibrations and interatomic potentials, and can be used to map local stress/strain distributions via Raman microscopy. This method is…

We have developed a formulation of density functional perturbation theory for the calculation of vibrational frequencies in molecules and solids, which uses numerical atomic orbitals as a basis set for the electronic states. The (harmonic)…

材料科学 · 物理学 2007-05-23 J. M. Pruneda , S. K. Estreicher , J. Junquera , J. Ferrer , P. Ordejon
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