相关论文: Voltage Controlled Resistance

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…

In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…

In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our…

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust…

In this paper we present an exhaustive description of the basic types of CNTFETs. In particular we review two models, already proposed by us, which allow an easy implementation in circuit simulators, both in analog and in digital…

In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current…

Two-dimensional (2D) materials have been used extensively in various fields due to their unique physical and chemical properties. Among their diverse applications, field-effect transistor biosensors (bio-FETs) promise a brilliant prospect…

Noncollinear frustrated magnets are proposed as a new class of spintronic materials with high magnetoresistance which can be controlled with relatively small applied voltages. It is demonstrated that their magnetic configuration strongly…

An inexpensive analog-to-digital converter has been built around the game port of the IBM personal computer. Using a single field effect transistor (FET) and three carbon resistors, it allows the game card to measure voltage, instead of its…

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control…

Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions…

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…

A flat mounting unit with electronically variable thermal resistance [1] has been presented in the last year [2]. The design was based on a Peltier cell and the appropriate control electronics and software. The device is devoted especially…

In RF (Radio Frequency) domain, one of the limitations of using MEMS (Micro Electromechanical Systems) switching devices for medium power applications is RF power. Failure phenomena appear even for 500 mW. A design of MEMS switched…

Reset control is introduced to overcome limitations of linear control. A reset controller includes a linear controller which resets some of states to zero when their input is zero or certain non-zero values. This paper studies the…

With current tools and technology, someone who has physical access to a chip can extract the detailed layout of the integrated circuit (IC). By using advanced visual imaging techniques, reverse engineering can reveal details that are meant…

A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…

The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi…